Paul Sharps

Sandia National Laboratories California — United States

Engineering · Physical Sciences

22h-index1.5kcitations167works1.52yr avg
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Research Topics

solar cell performance optimization(110), Chalcogenide Semiconductor Thin Films(53), Semiconductor Quantum Structures and Devices(50), Silicon and Solar Cell Technologies(43), GaN-based semiconductor devices and materials(25)

Publications167 total

Energy Efficiency Scaling for 2 Decades (EES2) Roadmap for Computing
2024· 3 cited
Growth and characterization of ferromagnetic Ga<sub>2</sub>O<sub>3</sub>:(Cr, Mn)
2024Open Access
(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
ECS Meeting Abstracts·2023
Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
2023Open Access
WBG & UWBG Semiconductors for Power Electronics.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Power and Control Electronics (PACE) Update
2023Open Access
(Invited) Vertical Gallium Nitride Mosfets for Electric Drivetrains
ECS Meeting Abstracts·2022· 1 citedOpen Access
Vertical Gallium Nitride MOSFETs for Electric Drivetrains.
2022Open Access
Realization of Medium-Voltage Vertical GaN PiN Diodes (invited).
2022Open Access
Progress in Fabrication and Characterization of Vertical GaN Power Devices (invited).
2022Open Access
Heteroepitaxy of Dirac semimetal Cd3As2 by MOCVD.
2021Open Access
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes
2021· 12 citedOpen Access
Recent Progress in Vertical Gallium Nitride Power Devices.
2021Open Access
(Invited) Development of Vertical Gallium Nitride Power Devices for Use in Electric Vehicle Drivetrains
ECS Meeting Abstracts·2021
(Invited) Vertical Gallium Nitride PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics
ECS Meeting Abstracts·2021
Development of Vertical GaN Power Devices for Use in Electric Vehicle Drivetrains (invited).
2021Open Access
Vertical GaN PN Diodes for Grid Resiliency and Medium-Voltage Power Electronics.
2021Open Access
Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes.
2021· 1 citedOpen Access
Vertical GaN Devices for Medium-Voltage Power Electronics.
2021Open Access
Heteroepitaxy of Dirac semimetal Cd3As2 by metal-organic chemical-vapor deposition
Journal of Crystal Growth·2021· 1 citedOpen Access
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Frequent Co-authors

M.A. Stan(17), D. Aiken(16), Pravin Patel(12), Navid S. Fatemi(12), A. Cornfeld(9), M. L. Timmons(5), H.Q. Hou(5), A. Korostyshevsky(5), Tansen Varghese(5), B. Cho(4), Yong Lin(4), Jeffrey Steinfeldt(4), T. Varghese(4), V. Ley(4), Christopher Kerestes(4), David V. Forbes(4), John Spann(4), Seth M. Hubbard(4), J.S. Hills(4), Brad Clevenger(4)