Hoseong Shin

Institute of Nanotechnology — United Kingdom

Materials Science · Physical Sciences

8h-index151citations18works4.42yr avg
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Research Topics

2D Materials and Applications(12), Graphene research and applications(9), Advancements in Semiconductor Devices and Circuit Design(3), Nanowire Synthesis and Applications(3), MXene and MAX Phase Materials(3)

Publications18 total

Chaotic Polarization Pattern‐Based Optical PUF for Tri‐Modal Authentication Application
Advanced Functional Materials·2025
Highly Reliable MoS <sub>2</sub> Flash Memory with Ultrathin TaO <sub> <i>x</i> </sub> Tunneling Layer Formed via Partial Oxidation of TaS <sub>2</sub> Floating Gate
ACS Nano·2025
Recent progress in the development of backplane thin-film transistors for information displays
Journal of Information Display·2025· 3 citedOpen Access
Disorder- and Interaction-Driven Quantum Criticality in WSe<sub>2</sub>
ACS Nano·2025
P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes
Nano Letters·2024· 9 cited
Demonstration of Steep Switching Behavior Based on Band Modulation in WSe2 Feedback Field-Effect Transistor
Nanomaterials·2024· 1 citedOpen Access
Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS<sub>2</sub> Field Effect Transistors
ACS Applied Electronic Materials·2024· 15 cited
Double-Side-Doped 2D TMD FET Channel
ACS Applied Electronic Materials·2024· 7 cited
Link between <i>T</i>-Linear Resistivity and Quantum Criticality in Ambipolar Black Phosphorus
ACS Nano·2024· 5 citedOpen Access
Doping-Free High-Performance Photovoltaic Effect in a WSe<sub>2</sub> Lateral <i>p-n</i> Homojunction Formed by Contact Engineering
ACS Applied Materials & Interfaces·2023· 11 cited
Achieving Ultrahigh Electron Mobility in PdSe<sub>2</sub> Field‐Effect Transistors via Semimetal Antimony as Contacts
Advanced Functional Materials·2023· 35 cited
Percolation-Based Metal–Insulator Transition in Black Phosphorus Field Effect Transistors
ACS Applied Materials & Interfaces·2023· 4 citedOpen Access
Effects of Oxygen Plasma Treatment on Fermi‐Level Pinning and Tunneling at the Metal–Semiconductor Interface of WSe<sub>2</sub> FETs
Advanced Electronic Materials·2023· 20 citedOpen Access
Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe<sub>2</sub> Semiconductor Devices
ACS Applied Materials & Interfaces·2022· 8 cited
Gate-Controlled Metal to Insulator Transition in Black Phosphorus Nanosheet-Based Field Effect Transistors
ACS Applied Nano Materials·2022· 2 cited
Self‐Powered 2D MoS<sub>2</sub>/WO<i><sub>x</sub></i>/WSe<sub>2</sub> Heterojunction Photodetector Realized by Oxygen Plasma Treatment
Advanced Materials Interfaces·2022· 15 cited
Contact Resistivity in Edge‐Contacted Graphene Field Effect Transistors
Advanced Electronic Materials·2022· 16 cited
Hydrogen Sensor for High Temperature and Humid Environment Applications
ECS Meeting Abstracts·2019

Frequent Co-authors

Won Jong Yoo(15), Nasir Ali(10), Tien Dat Ngo(7), Sungwon Lee(7), Fida Ali(6), Kwangro Lee(5), Min Sup Choi(5), Kenji Watanabe(5), Takashi Taniguchi(5), Hyungyu Choi(4), Gil‐Ho Kim(4), Hyokwang Park(4), Zhenping Wang(3), Boseok Kang(3), Myeong‐jin Lee(3), James Hone(2), Muhammad Taqi(2), Byungdu Oh(2), Hyungyu Choi(2), Brian S. Y. Kim(2)