Wei Cao

University of California, Santa Barbara — United States

Engineering · Physical Sciences

25h-index3.7kcitations78works11.62yr avg
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Research Topics

Semiconductor materials and devices(26), Advancements in Semiconductor Devices and Circuit Design(26), Graphene research and applications(25), 2D Materials and Applications(25), Ferroelectric and Negative Capacitance Devices(22)

Publications78 total

An Introduction to Solid-state NMR and Potential Applications for MOFs and COFs
2024· 1 citedOpen Access
Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling
Nature Electronics·2024· 35 cited
Analysis and Implication of Electrothermal Effects in Emerging 3D Transistors and Integration Topologies with Two-Dimensional Semiconductors
2024· 2 cited
Exploration and Analysis of Metallic, Optical, and Superconducting Cryo-Interconnects for Large-Scale Quantum Computers
2024
Strain engineering in 2D FETs: Physics, status, and prospects
Journal of Applied Physics·2024· 15 citedOpen Access
An ultra energy-efficient hardware platform for neuromorphic computing enabled by 2D-TMD tunnel-FETs
Nature Communications·2024· 28 citedOpen Access
A Framework for Exploring Gate-Dielectric Materials for High-Performance Two-Dimensional Field-Effect-Transistors
IEEE Transactions on Materials for Electron Devices·2024
Advancing High-Performance Large-Scale Quantum Computing with Cryogenic 2D-CMOS
2023· 2 cited
A Materials-Device Co-Design Framework for Realizing Ultra Energy-Efficient All-2D Spin-Logic Circuits with 2D-Materials
2023
Publisher Correction: The future transistors
Nature·2023· 1 citedOpen Access
The future transistors
Nature·2023· 480 cited
Exploration and Exploitation of Strain Engineering in 2D-FETs
2023
Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
Advanced Materials·2022· 126 citedOpen Access
Two-dimensional materials enabled next-generation low-energy compute and connectivity
MRS Bulletin·2021· 21 cited
One-Dimensional Edge Contacts to Two-Dimensional Transition-Metal Dichalcogenides: Uncovering the Role of Schottky-Barrier Anisotropy in Charge Transport across <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mrow><mml:mi>Mo</mml:mi><mml:mi mathvariant="normal">S</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>/Metal Interfaces
Physical Review Applied·2021· 66 cited
Analog Monolayer MoS2 Transistor with Record-high Intrinsic Gain (>100 dB) and Ultra-low Saturation Voltage (<0.1 V) by Source Engineering
2021· 1 cited
0.5T0.5R—An Ultracompact RRAM Cell Uniquely Enabled by van der Waals Heterostructures
IEEE Transactions on Electron Devices·2021· 37 citedOpen Access
A mode-balanced reconfigurable logic gate built in a van der Waals strata
npj 2D Materials and Applications·2021· 13 citedOpen Access
0.5T0.5R - Introducing an Ultra-Compact Memory Cell Enabled by Shared Graphene Edge-Contact and h-BN Insulator
2020· 12 cited
A Compact Current–Voltage Model for 2-D-Semiconductor-Based Lateral Homo-/Hetero-Junction Tunnel-FETs
IEEE Transactions on Electron Devices·2020· 9 cited
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Frequent Co-authors

Kaustav Banerjee(46), Jiahao Kang(20), Arnab Pal(15), Wei Liu(13), Kamyar Parto(10), Deblina Sarkar(9), Junkai Jiang(9), Kunjesh Agashiwala(7), Chao‐Hui Yeh(7), Xuejun Xie(6), Tanmay Chavan(5), Jae Hwan Chu(4), Yasin Khatami(3), Dujiao Zhang(3), Yongji Gong(2), Pulickel M. Ajayan(2), Haojun Zhang(2), Daming Huang(2), Stephan Kräemer(1), Huiming Bu(1)