P. C. Euthymiou

National and Kapodistrian University of Athens — Greece

Physics and Astronomy · Physical Sciences

8h-index260citations73works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(28), Advanced Semiconductor Detectors and Materials(27), Semiconductor materials and interfaces(22), Semiconductor materials and devices(15), Silicon and Solar Cell Technologies(14)

Publications73 total

A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under α-particle irradiation
Microelectronics Journal·2008
Electron irradiation induced defects in undoped and Te doped gallium phosphide
Solid State Communications·2007· 8 cited
Temperature dependence of Si–GaAs energy gap using photoconductivity spectra
Microelectronics Journal·2005· 1 cited
Persistent photoconductivity in a InP:Fe single layer structure at room temperature
2005· 2 cited
Dependence of GaAs:Si persistent photoconductivity on temperature and α-particle irradiation
Microelectronics Journal·2004· 1 cited
Electrical and detection performance of radiation detector based on bulk semi-insulating InP:Fe: role of detector volume
2002
The influence of small doses of fast neutron irradiation on the critical temperature and EPR spectra of YBa2Cu3O7−δ high temperature superconductors
Physica C Superconductivity·1999· 5 cited
Persistent photoconductivity in semiconducting III–V compounds
Physics-Uspekhi·1999· 11 cited
Room temperature persistent photoconductivity in GaP:S
Solid State Communications·1998· 11 cited
A review article on the transport properties in fatfets upon irradiation
Acta physica Hungarica·1994
A study of the profile of the E3 electron trap in GaAs
Solid State Communications·1994· 1 cited
Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures
physica status solidi (a)·1993· 3 cited
Long range effect in ion-implanted GaAs
Radiation effects and defects in solids·1993· 4 cited
The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers
physica status solidi (a)·1993· 2 cited
Effect of α-Particle Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at Low Temperatures
physica status solidi (a)·1992· 2 cited
Effect of electron irradiation on the mobility profile in GaAs FATFETs
Solid State Communications·1991· 3 cited
Correction of the drift mobility measurements in GaAs MESFETS
Solid State Communications·1991· 3 cited
Dependence of I-U Characteristics of GaAs MESFETs on Temperature and α-Particle Irradiation
physica status solidi (a)·1991· 2 cited
Dependence of the mobility limit upon the Fermi level position in direct gap III–V group semiconductors
Solid State Communications·1990· 3 cited
DLTS studies of defects in GaP : Te before and after electron irradiation
Solid State Communications·1990· 1 cited
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Frequent Co-authors

C.D. Kourkoutas(13), G. Papaioannou(12), C. D. Nomicos(12), G. E. Zardas(12), G. E. Giakoumakis(8), P C Banbury(5), B. Szentpáli(5), Ch.I. Symeonides(4), Panayiotis Yannakopoulos(4), P. A. Skountzos(4), Balázs Kovács(4), P. Bekris(3), A. Th. Philadelpheus(3), D. I. Kladis(3), C. E. Ravanos(3), K. Somogyi(3), P. Sandilos(2), В.С. Вавилов(2), D. E. Theodorou(2), C. I. Symeonides(2)