P C Banbury

University of Reading — United Kingdom

Physics and Astronomy · Physical Sciences

11h-index327citations40works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(19), Silicon and Solar Cell Technologies(18), Semiconductor materials and devices(14), Integrated Circuits and Semiconductor Failure Analysis(8), Advanced Semiconductor Detectors and Materials(6)

Publications40 total

A review article on the transport properties in fatfets upon irradiation
Acta physica Hungarica·1994
Effect of α-particle irradiation on GaAs planar photoconductive detectors at low temperatures
physica status solidi (a)·1993· 3 cited
The Effect of Electron Irradiation Dose on the Profile of Electric Characteristics of GaAs VPE Layers
physica status solidi (a)·1993· 2 cited
DLTS studies of defects in GaP : Te before and after electron irradiation
Solid State Communications·1990· 1 cited
Dependence of I-U characteristics of GaAs MESFET on temperature and electron irradiation
physica status solidi (a)·1989· 3 cited
Transport parameters in illuminated layers of semiinsulating GaAs
Solid State Communications·1987· 2 cited
Defect studies in electron-irradiated boron-doped silicon
Journal of Physics C Solid State Physics·1987· 6 cited
AC hopping conductivity and DLTS studies on electron-irradiated boron-doped silicon
Semiconductor Science and Technology·1987· 14 cited
Electron-damage studies in GaP at low temperature
Solid State Communications·1986· 2 cited
A bistable defect in electron-irradiated boron-doped silicon
Journal of Physics C Solid State Physics·1985· 45 cited
Low-temperature radiation damage studies in phosphorus-doped silicon
Journal of Physics C Solid State Physics·1982· 3 cited
Low-temperature radiation damage studies in boron-doped silicon
Journal of Physics C Solid State Physics·1982· 4 cited
Low-temperature radiation damage studies in silicon by hopping conductance
Journal of Physics C Solid State Physics·1981· 13 cited
Electrical measurements on electron irradiated <i>n</i>-and <i>p</i>-type GaAs
Radiation Effects·1972· 9 cited
DAMAGE RATE COMPUTATIONS FOR DIAMOND STRUCTURES UNDER ELECTRON IRRADIATION.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1970
ANISOTROPY OF DEFECT PRODUCTION IN ELECTRON-IRRADIATED IRON AND SILICON.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1968
ENERGY AND ORIENTATION DEPENDENCE OF DEFECT PRODUCTION IN SEMICONDUCTORS.
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1968
Energy dependence of anisotropy of defect production in electron irradiated diamond‐type crystals
Philosophical magazine·1966· 15 cited
Energy dependence of anisotropy of defect production in electron irradiated diamond-type crystals
Philosophical magazine·1966· 29 cited
Energy and orientation effects of electron irradiation in silicon
Philosophical magazine·1965· 8 cited
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Frequent Co-authors

P. C. Euthymiou(7), C.D. Kourkoutas(6), G. E. Zardas(5), G.A. Barnes(4), John D. Nixon(4), J. A. Grimshaw(3), I. N. Haddad(3), S D Kouimtzi(3), D H Lindley(3), Emma Mitchell(3), G. Papaioannou(3), Santo Bains(2), H.K. Henisch(2), J. Houghton(2), D. Haneman(2), B. Szentpáli(2), K. Somogyi(2), H A Gebbie(1), C. A. Hogarth(1), A. Many(1)