S. E. Haszko

Engineering · Physical Sciences

20h-index1.3kcitations50works0.02yr avg
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Research Topics

Semiconductor materials and devices(21), Semiconductor materials and interfaces(11), Silicon and Solar Cell Technologies(8), Integrated Circuits and Semiconductor Failure Analysis(7), Thin-Film Transistor Technologies(6)

Publications50 total

A Method for Area Saving Planar Isolation Oxides Using Oxidation Protected Sidewalls
Journal of The Electrochemical Society·1980· 21 cited
Bird's Beak Configuration and Elimination of Gate Oxide Thinning Produced during Selective Oxidation
Journal of The Electrochemical Society·1980· 32 cited
ChemInform Abstract: THE HIGH TEMPERATURE DEPOSITION AND EVALUATION OF PHOSPHORUS‐ OR BORON‐DOPED SILICON DIOXIDE FILMS
Chemischer Informationsdienst·1979
Electrically active stacking faults in CMOS integrated circuits
Journal of Applied Physics·1979· 36 cited
The High Temperature Deposition and Evaluation of Phosphorus‐ or Boron‐Doped Silicon Dioxide Films
Journal of The Electrochemical Society·1979· 4 cited
Erratum: Optimization of Al step coverage through computer simulation and scanning electron microscopy [J. Vac. Sci. Technol. 15, 13 (1978)]
Journal of Vacuum Science and Technology·1978· 2 cited
Erratum: “Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation” [J. Electrochem. Soc., 125, 601 (1978)]
Journal of The Electrochemical Society·1978
ChemInform Abstract: ALUMINUM OXIDATION IN WATER
Chemischer Informationsdienst·1978
ChemInform Abstract: REACTIVE PLASMA DEPOSITED SILICON‐NITROGEN FILMS FOR MOS‐LSI PASSIVATION
Chemischer Informationsdienst·1978
ChemInform Abstract: CONTROLLING THE INTERFACIAL OXIDE LAYER OF TITANIUM ALUMINUM CONTACTS WITH THE CHROMIUM(IV) OXIDE‐PHOSPHORIC ACID ETCH
Chemischer Informationsdienst·1978
Aluminum Oxidation in Water
Journal of The Electrochemical Society·1978· 17 cited
Reactive Plasma Deposited Si‐N Films for MOS‐LSI Passivation
Journal of The Electrochemical Society·1978· 201 cited
Controlling the Interfacial Oxide Layer of Ti‐Al Contacts with the CrO3 ‐  H 3 PO 4 Etch
Journal of The Electrochemical Society·1978· 4 cited
Optimization of Al step coverage through computer simulation and scanning electron microscopy
Journal of Vacuum Science and Technology·1978· 33 citedOpen Access
Electron-beam-induced current and TEM studies of stacking faults formed by the oxidation of boron-implanted silicon
Journal of Applied Physics·1977· 6 cited
ChemInform Abstract: ELECTRICAL ACTIVITY OF EPITAXIAL STACKING FAULTS
Chemischer Informationsdienst·1977
Tapered Windows in SiO2: The Effect of  NH 4 F  :  HF  Dilution and Etching Temperature
Journal of The Electrochemical Society·1977· 42 cited
Electrical Activity of Epitaxial Stacking Faults
Journal of The Electrochemical Society·1977· 28 cited
Abstract: Electrical activity of epitaxial stacking faults
Journal of Vacuum Science and Technology·1977· 2 cited
ChemInform Abstract: OBSERVATIONS ON SI CONTAMINATION IN GAP LPE
Chemischer Informationsdienst·1975
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Frequent Co-authors

T. T. Sheng(10), R. B. Marcus(8), A. K. Sinha(7), J. H. Wernick(6), S. P. Murarka(6), O. G. Lorimor(5), G. A. Rozgonyi(5), McD. Robinson(5), T. E. Smith(4), P.D. Dapkus(4), T. A. Shankoff(4), C. C. Chang(4), H. J. Levinstein(3), G. Quintana(3), Giorgio Parisi(3), L. Katz(3), R. Wolfe(3), David B. Fraser(3), Robert Wolfe(2), C. J. Hwang(2)