O. G. Lorimor

Alcatel Lucent (Germany) — Germany

Physics and Astronomy · Physical Sciences

15h-index836citations39works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(16), GaN-based semiconductor devices and materials(9), Semiconductor materials and devices(9), Semiconductor materials and interfaces(9), Silicon and Solar Cell Technologies(7)

Publications39 total

Failure mechanism of avalanche photodiodes in the presence of water vapor
Journal of Lightwave Technology·2001· 12 cited
Long Wavelength Photodetectors: Performance And Reliability
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1990· 1 cited
High speed, ion bombarded InGaAs photoconductors
Applied Physics Letters·1985· 33 cited
Fast InGaAs photoconductive detectors with speed enhanced by Berylium ion bombardment
1984
Connectorized Optical Link Package Incorporating a Microlens
IEEE Transactions on Components Hybrids and Manufacturing Technology·1980· 4 cited
Degradation of bulk electroluminescent efficiency in Zn, O-doped GaP LED's
IEEE Transactions on Electron Devices·1977· 26 cited
Zn,OをドープしたGaP LEDのバルクエレクトロルミネセンス効率の低下
1977
Defect structure induced during forward-bias degradation of GaP green-light-emitting diodes
Journal of Applied Physics·1976· 53 cited
ChemInform Abstract: OBSERVATIONS ON SI CONTAMINATION IN GAP LPE
Chemischer Informationsdienst·1975
Observations on Si Contamination in GaP LPE
Journal of The Electrochemical Society·1975· 8 citedOpen Access
ChemInform Abstract: VERY HIGH EFFICIENCY GAP GREEN LIGHT EMITTING DIODES
Chemischer Informationsdienst·1975
Effect of dislocations on green electroluminescence efficiency in GaP grown by liquid phase epitaxy
Journal of Applied Physics·1975· 62 cited
Very High Efficiency GaP Green Light Emitting Diodes
Journal of The Electrochemical Society·1975· 18 cited
Infrared absorption of silicon isotopes in gallium phosphide
Journal of Applied Physics·1974· 11 cited
Liquid phase epitaxy processes for GaP led's
Journal of Crystal Growth·1974· 15 cited
Room-temperature deep-state emission spectra, radiative efficiency, and lifetime of some GaP:Te,N crystals
Journal of Applied Physics·1974· 7 cited
Kinetics of recombination in nitrogen-doped GaP
Journal of Applied Physics·1974· 46 cited
ChemInform Abstract: NITROGEN DOPING BEHAVIOR IN GAP USING NH3 AS THE DOPANT SOURCE
Chemischer Informationsdienst·1974
Nitrogen concentration in GaP measured by optical absorption and by proton-induced nuclear reactions
Journal of Applied Physics·1974· 63 cited
Nitrogen Doping Behavior in GaP Using NH[sub 3] as the Dopant Source
Journal of The Electrochemical Society·1974· 10 cited
page 1 of 2Next →

Frequent Co-authors

P.D. Dapkus(8), R. Z. Bachrach(8), W. G. Spitzer(7), W. H. Hackett(6), S. E. Haszko(5), R. H. Saul(5), James M. Ralston(3), P. M. Downey(2), R. E. Nahory(2), L. R. Dawson(2), M. E. Weiner(2), L. C. Luther(2), H. C. Casey(2), A. S. Jordan(2), D. D. Roccasecca(2), E C Lightowlers(1), J. C. North(1), William A. Brantley(1), P. M. Petroff(1), M. Waldner(1)