W. G. Spitzer

Physics and Astronomy · Physical Sciences

42h-index8.9kcitations134works0.02yr avg
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Research Topics

Semiconductor materials and interfaces(58), Silicon and Solar Cell Technologies(45), Semiconductor Quantum Structures and Devices(37), Ion-surface interactions and analysis(21), Thin-Film Transistor Technologies(20)

Publications134 total

The depolarization of neutrons
PhDT·2015Open Access
Localized vibrational modes in semiconductors: Infrared absorption
Advances in Solid State Physics·2007· 11 cited
Flicker Noise in Transistors
2006
Activation of free-charge carriers in Be-implanted GaAs annealed at low temperatures
Journal of Applied Physics·1986· 9 cited
Infrared study of hydrogen- and carbon-implanted heavily doped, <i>n</i>-type GaAs
Journal of Applied Physics·1986· 24 cited
Ion implantation of Si by 12C, 29Si, and 120Sn: Amorphization and annealing effects
Journal of Applied Physics·1985· 35 cited
High-resolution infrared absorption measurements of Al-doped ZnSe
Journal of Applied Physics·1985· 8 cited
Effects Of Annealing On The Optical Properties Of Proton Irradiated n-type Gallium Arsenide
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1985
Effect of annealing on the optical properties of ion-implanted Ge
Journal of Applied Physics·1985· 15 cited
Thermal Annealing Behavior Of Hydrogen-Free Amorphous Silicon And Germanium
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1985· 3 cited
Solid phase regrowth of low temperature Be-implanted GaAs
Journal of Applied Physics·1985· 15 cited
High-resolution measurements of localized vibrational mode infrared absorption of Si-doped GaAs
Journal of Applied Physics·1984· 62 cited
Amorphous silicon produced by ion implantation: Effects of ion mass and thermal annealing
Journal of Applied Physics·1984· 53 cited
Infrared Properties Of Heavily Implanted Silicon, Germanium And Gallium Arsenide
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1984· 1 cited
High Resolution Measurements of Impurity-Induced Localized Vibrational Modes in Semiconductors.
1984
Amorphous Silicon Produced by Ion Implantation: Etching Rate in Solution and Effect of Annealing
Journal of The Electrochemical Society·1984· 12 cited
Low temperature annealing of Be-implanted GaAs
Journal of Applied Physics·1983· 8 cited
Properties of amorphous silicon produced by ion implantation: Thermal annealing
Nuclear Instruments and Methods in Physics Research·1983· 39 cited
Direct evidence for the site of substitutional carbon in GaAs using localized vibrational mode spectroscopy
Physica B+C·1983· 9 cited
Physical Properties of Two Metastable States of Amorphous Silicon
MRS Proceedings·1983· 6 cited
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Frequent Co-authors

D. A. Kleinman(6), Carver Mead(6), J. E. Fredrickson(6), G. K. Hubler(6), C.N. Waddell(5), C.R. Crowell(4), Heng Fan(3), L. E. Howarth(3), O. G. Lorimor(3), Robert C. Miller(2), C. J. Frosch(2), W. M. Theis(2), W. P. Allred(2), T. A. Kennedy(2), A. H. Kachare(2), F. Euler(2), A. Kahan(2), M. Waldner(2), D. Walsh(1), J. M. Whelan(1)