W. P. Allred

Moxtek (United States) — United States

Physics and Astronomy · Physical Sciences

13h-index505citations26works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(12), Advanced Semiconductor Detectors and Materials(11), Chalcogenide Semiconductor Thin Films(9), Semiconductor materials and interfaces(9), Silicon and Solar Cell Technologies(5)

Publications26 total

Advancements in platelet growth
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·1996· 8 cited
Photoluminescence and absorption studies of defects in CdTe and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Te crystals
Physical review. B, Condensed matter·1993· 51 cited
Photoluminescence studies in Zn<i>x</i>Cd1−<i>x</i>Te single crystals
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1990· 38 cited
Photoconductive characterization of Zn<i>x</i>Cd1−<i>x</i>Te (0≤<i>x</i>≤0.25) single crystal alloys
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1990· 26 cited
Annealing Behavior of the Photoluminescence Lines in CdTe and Znx Cd1-x Te Single Crystals
ScholarsArchive (Brigham Young University)·1990
Annealing Behavior of The Photoluminescence Lines in CdTe and Zn<sub>x</sub> Cd<sub>1−x</sub> Te Single Crystals
MRS Proceedings·1989
Growth and characterization of high quality, low defect, subgrain free cadmium telluride by a modified horizontal Bridgman technique
1987
Growth and structural properties of low defect, sub-grain free CdTe substrates grown by the horizontal bridgman technique
Journal of Electronic Materials·1986· 33 cited
Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique
MRS Proceedings·1986· 5 cited
High-Pressure Gradient-Freeze Growth of Single Crystals of Indium Phosphide.
1982
High-pressure gradient-freeze growth of single crystals of indium phosphide
Defense Technical Information Center (DTIC)·1981
Synthesis of indium phosphide in a pressure balanced system
Journal of Crystal Growth·1981· 5 cited
Study Czochralski Liquid-Seal Crystal Growing Technique.
Defense Technical Information Center (DTIC)·1979
Liquid-seal Czochralski growth of gallium arsenide
Journal of Crystal Growth·1973· 13 cited
Infrared absorption study of Li-diffused Mg-doped GaAs
Journal of Applied Physics·1972· 16 cited
An infrared localized vibrational mode technique for measuring segregation coefficients
Journal of Physics and Chemistry of Solids·1971· 13 cited
Vibrational Modes of Defects in GaP
Journal of Applied Physics·1969· 27 cited
Local-Mode Absorption and Defects in Compensated Silicon-Doped Gallium Arsenide
Journal of Applied Physics·1968· 77 citedOpen Access
SITE TRANSFER OF Si IN GaAs
Applied Physics Letters·1968· 36 cited
Localized Vibrational Modes of Defect Pairs in Silicon
1968· 10 cited
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Frequent Co-authors

W. G. Spitzer(8), David D. Allred(5), J. González‐Hernández(4), E. López‐Cruz(4), A. Reyes‐Mena(3), A. Azim Khan(3), Carl J. Johnson(3), V. P. Tsvetov(3), P. C. Leung(2), L. H. Skolnik(2), N. C. Giles(2), J. F. Schetzina(2), Cheryl Barnett Davis(1), J. González‐Hernández(1), Ovidio González(1), Bret C. Hess(1), R. T. Bate(1), Brian Dean(1), S. E. Hooper(1), J. E. Hawkey(1)