M. Waldner

Technical University of Munich — Germany

Engineering · Physical Sciences

7h-index245citations23works5.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(8), Acoustic Wave Resonator Technologies(6), Advanced MEMS and NEMS Technologies(5), Semiconductor materials and interfaces(5), Semiconductor Quantum Structures and Devices(4)

Publications23 total

Chemical Characterization of Red Wine Polymers and Their Interaction Affinity with Odorants
Foods·2024· 5 citedOpen Access
High Speed Digital Computation With GaAs Technology
2005
High-resolution laser interferometer for the characterization of the anelastic behavior of spring materials/ Hochauflösendes Laser-Interferometer für die Charakterisierung des anelastischen Verhaltens von Federwerkstoffen
tm - Technisches Messen·1992· 1 cited
Analysis of second level resonant tunneling diodes and transistors
Journal of Applied Physics·1988· 35 cited
Submicrometer GaAs Digital ICs
1983· 5 cited
Future applications and limitations for digital GaAs IC technology
Microwave journal·1983· 1 cited
High speed GaAs static RAM technology and design
easc·1981· 3 cited
Design of Unapodized Surface-Wave Transducers with Spectral Weighting
IEEE Transactions on Microwave Theory and Techniques·1974· 7 cited
Refraction and Reflection of Surface Acoustic Waves at Boundaries of Layered Anisotropic Substrates: Gold on Lithium Niobate
Journal of Applied Physics·1971· 5 cited
Refraction and reflection of ultrasonic surface waves by thin-gold-film layers on lithium-niobate substrates
Electronics Letters·1970· 1 cited
Fundamental and Higher-Order Mode Surface Wave Propagation on Layered Anisotropic Substrates—Gold on Lithium Niobate
Journal of Applied Physics·1970· 14 cited
Optical Studies of Surface Wave Refractive and Reflective Device Structures
1970
SELECTIVE DOPING OF PIEZOELECTRIC CRYSTALS BY ION IMPLANTATION.
1969· 2 cited
Gallium arsenide on sapphire field-effect transistors
Proceedings of the IEEE·1969· 4 cited
Local Mode Absorption of Al and P in GaAs
Journal of Applied Physics·1966· 43 cited
Ion drift effect in silicon p-n junctions formed by sodium ion bombardment
Proceedings of the IEEE·1966· 1 cited
Infrared Combination Mode Absorption in Lithium-Boron-Doped Silicon
Physical Review·1965· 28 cited
Localized Mode Measurements of Boron- and Lithium-Doped Silicon
Journal of Applied Physics·1965· 41 cited
Pairing Energy of Lithium and Boron in Silicon
Physical Review Letters·1965· 26 cited
Hot Electron Emission from Silicon Surfaces
Journal of Applied Physics·1965· 7 cited
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Frequent Co-authors

W. G. Spitzer(4), M. E. Pedinoff(4), William Jones(3), P.E. McQuaid(2), P.T. Greiling(2), O. G. Lorimor(1), J. N. Schulman(1), M. A. Hiller(1), James J. Campbell(1), L. L. Sivo(1), G.R. Nudd(1), R.L. Zimmerman(1), Anna Maria Gabler(1), Annalena Ludwig(1), Florian Biener(1), Corinna Dawid(1), Oliver Frank(1), R. E. Lee(1), R.S. Beaubien(1), R. P. Bryan(1)