M. Lamorey

Materials Science · Physical Sciences

10h-index819citations12works0.02yr avg
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Research Topics

Phase-change materials and chalcogenides(6), Magnetic properties of thin films(4), Liquid Crystal Research Advancements(3), Advanced Memory and Neural Computing(3), Electronic Packaging and Soldering Technologies(2)

Publications12 total

The projection of the incidence of dielectric cracking during chip joining with lead free solder bumps
2016
The strength of BEOL structures fabricated using low K materials and its impact on CPI failures
2015· 2 cited
Mechanisms of retention loss in Ge<inf>2</inf>Sb<inf>2</inf>Te<inf>5</inf>-based Phase-Change Memory
2008· 21 cited
On the dynamic resistance and reliability of phase change memory
2008· 29 cited
Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory
2007· 273 cited
Novel Lithography-Independent Pore Phase Change Memory
2007· 109 cited
Ultra-Thin Phase-Change Bridge Memory Device Using GeSb
2006· 154 cited
Novel One-Mask Self-Heating Pillar Phase Change Memory
2006· 57 cited
Design considerations for MRAM
IBM Journal of Research and Development·2006· 82 cited
Recent advances in MRAM technology
2005· 14 cited
A 16-Mb MRAM featuring bootstrapped write drivers
IEEE Journal of Solid-State Circuits·2005· 48 cited
A 16Mb MRAM featuring bootstrapped write drivers
2004· 30 cited

Frequent Co-authors

Eric Joseph(6), R. Cheek(6), H.L. Lung(6), C. Lam(6), A. G. Schrott(6), M. Breitwisch(6), T. Nirschl(4), Simone Raoux(4), Yu Zhu(4), Ralf B. Bergmann(4), J. B. Philipp(4), Thomas D. Happ(4), Geoffrey W. Burr(4), Bipin Rajendran(4), J. DeBrosse(4), E. Gow(4), W. J. Gallagher(4), S. Z. A. Zaidi(3), Y.C. Chen(3), R. Dasaka(3)