R. Dasaka

IBM (United States) — United States

Materials Science · Physical Sciences

9h-index343citations18works0.02yr avg
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Research Topics

Phase-change materials and chalcogenides(13), Liquid Crystal Research Advancements(5), Chalcogenide Semiconductor Thin Films(5), Advanced Memory and Neural Computing(4), Integrated Circuits and Semiconductor Failure Analysis(4)

Publications18 total

A New Etch Planarization Technology to Correct Non-Uniformity Post Chemical Mechanical Polishing
IEEE Transactions on Semiconductor Manufacturing·2015· 6 cited
Integrated metrology's role in Gas Cluster Ion Beam etch
2015· 5 cited
Etch planarization - A new approach to correct non-uniformity post chemical mechanical polishing
2014· 2 cited
Precision integrated thickness control with gas cluster ion beam etch
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 3 cited
A low power phase change memory using thermally confined TaN/TiN bottom electrode
2011· 51 cited
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
Symposium on VLSI Technology·2011· 32 cited
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
Symposium on VLSI Technology·2011· 9 cited
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te5
Journal of Applied Physics·2011· 16 cited
IBM/Macronix PCRAM Joint Project
2011· 1 cited
混合イオン-電子導電(MIEC)材料に基づく多層クロスポイントメモリ用新規アクセス素子の耐久性とスケーリング傾向
Symposium on VLSI Technology·2011
Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys
MRS Proceedings·2010· 2 cited
Understanding amorphous states of phase-change memory using Frenkel-Poole model
2009· 24 cited
Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory
IEEE Electron Device Letters·2009· 24 cited
The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>
MRS Proceedings·2009· 3 cited
Mechanisms of retention loss in Ge&lt;inf&gt;2&lt;/inf&gt;Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;5&lt;/inf&gt;-based Phase-Change Memory
2008· 21 cited
On the dynamic resistance and reliability of phase change memory
2008· 29 cited
Patterning of N:Ge&lt;inf&gt;2&lt;/inf&gt;Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;5&lt;/inf&gt; Films and the Characterization of Etch Induced Modification for Non-Volatile Phase Change Memory Applications
Proceedings of the International Power Modulator Symposium and High Voltage Workshop/Proceedings of the ... International Power Modulator Symposium and ... High Voltage Workshop·2008· 6 cited
Novel Lithography-Independent Pore Phase Change Memory
2007· 109 cited

Frequent Co-authors

Eric Joseph(14), M. Breitwisch(12), A. G. Schrott(12), H.L. Lung(10), Yu Zhu(9), R. Cheek(8), C. Lam(8), Simone Raoux(8), Geoffrey W. Burr(5), Bipin Rajendran(5), Erh-Kun Lai(4), Huai‐Yu Cheng(4), M. Lamorey(3), Pei-Ying Du(3), Chieh-Fang Chen(3), Chung Lam(3), Yang‐Hsin Shih(3), C.F. Chen(2), M.H. Lee(2), Thomas D. Happ(2)