Pei-Ying Du

Macronix International (Taiwan) — Taiwan

Engineering · Physical Sciences

16h-index785citations64works0.82yr avg
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Research Topics

Semiconductor materials and devices(47), Advanced Memory and Neural Computing(24), Advanced Data Storage Technologies(23), Advancements in Semiconductor Devices and Circuit Design(21), Electronic and Structural Properties of Oxides(10)

Publications63 total

A Serial–Parallel Mixing-Mode Matrix–Vector Multiplication Architecture for Large-Scale In-Storage Computing With Ultrahigh Parallelism in nand Flash Memories
IEEE Transactions on Electron Devices·2025· 1 cited
Utilizing 2T SONOS Cell Characteristics for L2/Euclidean Distance Computing - From Unit Cell to Array Operations
2025
A Novel Decrement Program-Verify Scheme of a 2T NOR Flash eNVM-Based In-Memory Computing Technology
2024· 1 cited
Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling Oxide
2024· 1 cited
A 3D Stackable DRAM: Capacitor-less Three-Wordline Gate-Controlled Thyristor (GCT) RAM with &gt;40 μ A Current Sensing Window, &gt;10<sub>10</sub> Endurance, and 3-second Retention at Room Temperature
2022 International Electron Devices Meeting (IEDM)·2022· 11 cited
First Experimental Study of Floating-Body Cell Transient Reliability Characteristics of Both N- and P-Channel Vertical Gate-All-Around Devices with Split-Gate Structures
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 2 cited
A Novel Super-Steep Slope (~0.015mV/dec) Gate-Controlled Thyristor (GCT) Functional Memory Device to Support the Integrate-and-Fire Circuit for Spiking Neural Networks
2020
A Vertical Split-Gate Flash Memory Featuring High-Speed Source-Side Injection Programming, Read Disturb Free, and 100K Endurance for Embedded Flash (eFlash) Scaling and Computing-In-Memory (CIM)
2020· 12 cited
A Comprehensive Study of Double-Density Hemi-Cylindrical (HC) 3-D NAND Flash
IEEE Transactions on Electron Devices·2020· 8 cited
An Extremely Scaled Hemi-Cylindrical (HC) 3D NAND Device with Large Vt Memory Window (&gt;10V) and Excellent 100K Endurance
2020· 2 cited
An Approach of 3D NAND Flash Based Nonvolatile Computing-In-Memory (nvCIM) Accelerator for Deep Neural Networks (DNNs) with Calibration and Read Disturb Analysis
2020· 3 cited
Editorial Special Issue on “Memory Devices and Technologies for the Next Decade”
IEEE Transactions on Electron Devices·2020· 1 citedOpen Access
Optimal Design Methods to Transform 3D NAND Flash into a High-Density, High-Bandwidth and Low-Power Nonvolatile Computing in Memory (nvCIM) Accelerator for Deep-Learning Neural Networks (DNN)
2019· 80 cited
A Novel Double-Density Hemi-Cylindrical (HC) Structure to Produce More than Double Memory Density Enhancement for 3D NAND Flash
2019· 14 cited
Study of Self-Healing 3D NAND Flash with Micro Heater to Improve the Performances and Lifetime for Fast NAND in NVDIMM Applications
2019· 9 cited
Read Disturb Evaluations of 3D NAND Flash for Highly Read-Intensive Edge-Computing Inference Device for Artificial Intelligence Applications
2019· 9 cited
Study of Thyristor-Mode Dual-Channel NAND Flash Devices
2018· 2 cited
A physics-based Quasi-2D model to understand the wordline (WL) interference effects of junction-free structure of 3D NAND and experimental study in a 3D NAND flash test chip
2017· 12 cited
A 128Gb (MLC)/192Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability
2017· 14 cited
A Comprehensive Characterization Method for Lateral Profiling of Interface Traps and Trapped Charges in P-SONOS Cell Devices
IEEE Transactions on Device and Materials Reliability·2016· 1 cited
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Frequent Co-authors

Hang-Ting Lue(40), Tzu‐Hsuan Hsu(24), Chih-Yuan Lu(23), Wei-Chen Chen(18), Chih‐Yuan Lu(17), Kuang-Yeu Hsieh(15), Teng-Hao Yeh(13), Keh-Chung Wang(13), Chih-Chang Hsieh(12), Erh-Kun Lai(11), Sheng-Chih Lai(11), Szu-Yu Wang(11), Yu Zhu(9), Huai‐Yu Cheng(8), H.L. Lung(8), Yen-Hao Shih(8), Rich Liu(8), Chia-Jung Chiu(8), Simone Raoux(7), C. Lam(7)