Huai‐Yu Cheng

Tung Wah College — China

Materials Science · Physical Sciences

25h-index2.2kcitations83works1.42yr avg
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Research Topics

Phase-change materials and chalcogenides(71), Chalcogenide Semiconductor Thin Films(35), Advanced Memory and Neural Computing(33), Liquid Crystal Research Advancements(17), Transition Metal Oxide Nanomaterials(12)

Publications83 total

Effect of forefoot strike and toe-out running on hip contact forces: A musculoskeletal modelling-based study
Journal of Biomechanics·2025· 1 citedOpen Access
An Optimized Hybrid DPWM Architecture
2025
GNPSum: A code summarization enhancement framework based on Graph Node Position
Information and Software Technology·2025· 1 cited
Enhancing 3D XPT/SOM Reliability: Strategies for Mitigating Spike Current and Improving Read Endurance
2025
Authorship Forensics Portal
International Conference on Computers in Education·2024Open Access
A GexSe1-x switch-only-memory technology through polarized atomic distribution
Scientific Reports·2024· 3 citedOpen Access
A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications
2024· 5 cited
State-Independent Low Resistance Drift SiSbTe Phase Change Memory for Analog In-Memory Computing Applications
2024· 3 cited
A Novel Program-verify Free and Low Drift Multilevel Operation on Cross-point OTS-PCM for In-Memory Computing Application
2024· 1 cited
AsSeGeS and GeN Heterostructures for Superior OTS Performance
2024
Research and Application of New Anti-CO2 Pollution and Low Damage Water-based Drilling Fluid
2023Open Access
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
2023· 1 cited
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low V<sub>th</sub> Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
2022 International Electron Devices Meeting (IEDM)·2022· 6 cited
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
2022 6th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM)·2022· 3 cited
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 2 cited
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low I<sub>OFF</sub>, High Endurance and Low V<sub>th</sub> Drift 3D Crosspoint Memory
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 18 cited
Overview and outlook of emerging non-volatile memories
MRS Bulletin·2021· 52 cited
Effect of surface temperature on GeSbTe damage formation during plasma processing
2021· 2 cited
Characterization of low temperature crystal growth parameters of the growth-dominated phase change materials GeSb6Te
Journal of Non-Crystalline Solids·2020
Enhancing the photoluminescence of SnS quantum dots by ZnS treatment
Chemical Physics Letters·2020· 8 cited
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Frequent Co-authors

H.L. Lung(25), Simone Raoux(23), M. BrightSky(21), Yu Zhu(20), Erh-Kun Lai(19), Wei-Chih Chien(17), C. Lam(17), Robert L. Bruce(15), A. Ray(15), C. W. Yeh(14), R. Cheek(11), Fabio Carta(10), A. G. Schrott(10), Sang‐Bum Kim(9), J.Y. Wu(9), Eric Joseph(9), I. T. Kuo(9), Jean Jordan‐Sweet(8), H. Y. Ho(8), Pei-Ying Du(7)