M. BrightSky

Engineering · Physical Sciences

24h-index2.5kcitations75works3.02yr avg
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Research Topics

Advanced Memory and Neural Computing(57), Phase-change materials and chalcogenides(53), Ferroelectric and Negative Capacitance Devices(15), Transition Metal Oxide Nanomaterials(14), Semiconductor materials and devices(11)

Publications75 total

Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
arXiv (Cornell University)·2025Open Access
Enhancing 3D XPT/SOM Reliability: Strategies for Mitigating Spike Current and Improving Read Endurance
2025
Energy‐Efficient Hardware Implementation of Spiking‐Restricted Boltzmann Machines Using Pseudo‐Synaptic Sampling
Advanced Intelligent Systems·2024· 1 citedOpen Access
Solving Max‐Cut Problem Using Spiking Boltzmann Machine Based on Neuromorphic Hardware with Phase Change Memory
Advanced Science·2024· 5 citedOpen Access
A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications
2024· 5 cited
Low RESET Current Mushroom‐Cell Phase‐Change Memory Using Fiber‐Textured Homostructure GeSbTe on Highly Oriented Seed Layer
physica status solidi (RRL) - Rapid Research Letters·2024· 12 cited
A Novel Program-verify Free and Low Drift Multilevel Operation on Cross-point OTS-PCM for In-Memory Computing Application
2024· 1 cited
AsSeGeS and GeN Heterostructures for Superior OTS Performance
2024
In-Memory Compute Chips with Carbon-based Projected Phase-Change Memory Devices
2023· 6 cited
A Comprehensive Study on the Pillar Size of OTS-PCM Memory with an Optimized Process and Scaling Trends Down to Sub-10 nm for SCM Applications
2023· 1 cited
New Phase-Change Materials by Atomic-Level Engineering the Dopants for Extremely Low V<sub>th</sub> Drift at 85 °C and High Endurance 3D Crosspoint Memory : IBM/Macronix PCRAM Joint Project
2022 International Electron Devices Meeting (IEDM)·2022· 6 cited
Pattern Training, Inference, and Regeneration Demonstration Using On‐Chip Trainable Neuromorphic Chips for Spiking Restricted Boltzmann Machine
Advanced Intelligent Systems·2022· 9 citedOpen Access
Mechanism and Impact of Bipolar Current Voltage Asymmetry in Computational Phase‐Change Memory
Advanced Materials·2022· 17 cited
Device Study on OTS-PCM for Persistent Memory Application : IBM/Macronix Phase Change Memory Joint Project
2022 6th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM)·2022· 3 cited
Endurance Evaluation on OTS-PCM Device using Constant Current Stress Scheme
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 2 cited
Temperature sensitivity of analog in-memory computing using phase-change memory
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 26 cited
Optimizing AsSeGe Chalcogenides by Dopants for Extremely Low I<sub>OFF</sub>, High Endurance and Low V<sub>th</sub> Drift 3D Crosspoint Memory
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 18 cited
Projected Mushroom Type Phase‐Change Memory
Advanced Functional Materials·2021Open Access
A Multi-Memristive Unit-Cell Array With Diagonal Interconnects for In-Memory Computing
IEEE Transactions on Circuits & Systems II Express Briefs·2021· 5 citedOpen Access
Accurate Weight Mapping in a Multi-Memristive Synaptic Unit
2021· 3 cited
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Frequent Co-authors

Huai‐Yu Cheng(22), Robert L. Bruce(21), Sang‐Bum Kim(18), H.L. Lung(18), A. Ray(17), C. Lam(16), Wei-Chih Chien(16), Yu Zhu(15), C. W. Yeh(13), Erh-Kun Lai(13), Fabio Carta(11), Abu Sebastian(10), Geoffrey W. Burr(9), W. Kim(9), I. T. Kuo(9), Chung Lam(8), Nanbo Gong(8), Hsiang-Lan Lung(7), W. Kim(7), Manuel Le Gallo(6)