Simon Fichtner

Engineering · Physical Sciences

22h-index2.5kcitations64works8.72yr avg
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Research Topics

Acoustic Wave Resonator Technologies(54), Ferroelectric and Piezoelectric Materials(37), Metal and Thin Film Mechanics(18), GaN-based semiconductor devices and materials(17), Advanced MEMS and NEMS Technologies(8)

Publications64 total

Nitride Ferroelectric Domain Wall Memory for Next-Generation Computing
Open MIND·2026Open Access
Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing
Advanced Electronic Materials·2025Open Access
Growth of wurtzite ferroelectrics
MRS Bulletin·2025· 1 citedOpen Access
Toward ferroelectric AlN/GaN heterostructures and sputtered III-N thin films with metal organic chemical vapor deposition-like texture
Communications Materials·2025Open Access
Wafer scale reactive sputtering of highly oriented and ferroelectric Al<sub>0.6</sub>Sc<sub>0.4</sub>N from 300 mm AlSc targets
Journal of Micromechanics and Microengineering·2025· 1 citedOpen Access
The effect of boron incorporation on leakage and wake-up in ferroelectric Al1−xScxN
Journal of Applied Physics·2025· 4 citedOpen Access
Scandium-Doped Aluminum Nitride (AlScN) Thin-Film as a Piezoelectric Optical Waveguide for Photonic Crystal Slabs
2025
Interfacial Polarization Switching in Al <sub>0.92</sub> Sc <sub>0.08</sub> N/GaN Heterostructures Grown by Sputter Epitaxy
Advanced Science·2025· 6 citedOpen Access
Al <sub>1‐x</sub> Sc <sub>x</sub> N‐Based Ferroelectric Domain‐Wall Memristors
Advanced Functional Materials·2025· 7 citedOpen Access
Polarization and domains in wurtzite ferroelectrics: Fundamentals and applications
Applied Physics Reviews·2025· 13 citedOpen Access
Growth and applications of AIScN and AIYN grown by MOCVD
2025
Oxygen Doping in Ferroelectric Wurtzite‐type Al<sub>0.73</sub>Sc<sub>0.27</sub>N: Improved Leakage and Polarity Control
Advanced Electronic Materials·2025· 9 citedOpen Access
The effect of boron incorporation on leakage and wake-up in ferroelectric Al_{1-x}Sc_xN
arXiv (Cornell University)·2025Open Access
Ferroelectric Al<sub>1‐x</sub>Sc<sub>x</sub>N Opposite State Retention Model Based on Switching Dynamics
Advanced Functional Materials·2025· 7 citedOpen Access
Electric field-induced domain structures in ferroelectric AlScN thin films
Journal of Applied Physics·2025· 17 citedOpen Access
Interfacial Polarization Switching in Al0.92Sc0.08N/GaN Heterostructures Grown by Sputter Epitaxy
arXiv (Cornell University)·2025Open Access
Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
arXiv (Cornell University)·2024· 1 citedOpen Access
Clarification of the spontaneous polarization direction in crystals with wurtzite structure
Applied Physics Letters·2024· 17 citedOpen Access
The interplay between imprint, wake-up, and domains in ferroelectric Al0.70Sc0.30N
Journal of Applied Physics·2024· 19 citedOpen Access
Modeling of polarization reversal-induced interface sheet charge in wurtzite-type AlScN/GaN heterostructures
Journal of Applied Physics·2024· 18 citedOpen Access
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Frequent Co-authors

Fabian Lofink(20), Georg Schönweger(19), Niklas Wolff(18), Lorenz Kienle(18), Bernhard Wagner(16), Md Redwanul Islam(15), H. Kohlstedt(14), A. Petraru(10), Maike Gremmel(9), Florian Niekiel(7), Jingxiang Su(6), Eckhard Quandt(6), Lutz Kirste(5), Tom‐Niklas Kreutzer(5), O. Ambacher(4), Isabel Streicher(4), Stefano Leone(4), Thomas Lisec(4), Thomas Mikolajick(3), Uwe Schroeder(3)