Uwe Schroeder

Engineering · Physical Sciences

78h-index21.9kcitations334works4.22yr avg
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Research Topics

Ferroelectric and Negative Capacitance Devices(251), Semiconductor materials and devices(196), MXene and MAX Phase Materials(94), Advanced Memory and Neural Computing(88), Ferroelectric and Piezoelectric Materials(85)

Publications332 total

N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO$_ 2$
DESY Publication Database (PUBDB) (Deutsches Elektronen-Synchrotron)·2026Open Access
N‐Type Behavior from a P‐Type Dopant: Charge Compensation Mechanisms in Trivalent Y‐Doped HfO <sub>2</sub>
Advanced Physics Research·2025Open Access
Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy
Applied Physics Letters·2025
Does a Morphotropic Phase Boundary Exist in Zr <sub>x</sub> Hf <sub>1‐x</sub> O <sub>2</sub> ‐Based Thin Films?
Advanced Functional Materials·2025Open Access
iDART: Interferometric Dual-AC Resonance Tracking nano-electromechanical mapping
arXiv (Cornell University)·2025Open Access
Correct quantification of oxygen vacancies in ferroelectric hafnia
Journal of Applied Physics·2025
HfO&lt;sub&gt;2&lt;/sub&gt;-based Ferroelectric Devices for Edge AI Application
2025
Non-Volatile Inverter With 3D Cylindrical Metal-Ferroelectric-Metal Capacitor Realizing Digitized Voltage Output for Computing-In-Memory
2025
Impact of Interfacial SiO&lt;sub&gt;2&lt;/sub&gt; Layer Thickness on the Electrical Performance of SiO&lt;sub&gt;2&lt;/sub&gt;/High-K Stacks on 4H-SiC
Materials science forum·2025· 1 citedOpen Access
Kinetic Monte Carlo simulation reveals defect charge accumulation favoring ferroelectric phase formation in Hf1−<i>x</i>Zr<i>x</i>O2 thin films
Journal of Applied Physics·2025· 1 citedOpen Access
Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current
2025
ZrO<sub>2</sub> Based Multilayered Stacks with Al<sub>2</sub>O<sub>3</sub>, Y<sub>2</sub>O<sub>3</sub> or La<sub>2</sub>O<sub>3</sub> Interlayers for SiC Power Devices
ACS Applied Materials & Interfaces·2025· 3 citedOpen Access
Ferroelectric Al<sub>1‐x</sub>Sc<sub>x</sub>N Opposite State Retention Model Based on Switching Dynamics
Advanced Functional Materials·2025· 7 citedOpen Access
Interaction Between Strain and Phase Formation in Hf <sub>x</sub> Zr <sub>1‐x</sub> O <sub>2</sub> Thin Films
Small·2025· 7 cited
Ferroelectric Materials and Their Applications for Next-Generation Integrated Devices
2024· 3 cited
Long‐Term Stability and Oxidation of Ferroelectric AlScN Devices: An Operando Hard X‐ray Photoelectron Spectroscopy Study
physica status solidi (RRL) - Rapid Research Letters·2024· 5 citedOpen Access
Long-term stability and oxidation of ferroelectric AlScN devices: An operando HAXPES study
arXiv (Cornell University)·2024Open Access
Emerging ferroelectric thin films: Applications and processing
Elsevier eBooks·2024· 2 cited
Contributors
Elsevier eBooks·2024Open Access
HfO&lt;sub&gt;2&lt;/sub&gt;-based Ferroelectric Capacitors for Non-Volatile Memory:&lt;br /&gt;Going from Single Devices to Memory Arrays
2024
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Frequent Co-authors

Thomas Mikolajick(42), Tony Schenk(20), Min Hyuk Park(19), Stefan Slesazeck(11), Cheol Seong Hwang(10), Milan Pešić(10), Michael Hoffmann(10), Johannes Müller(7), Jacob L. Jones(7), Claudia Richter(7), Young Hwan Lee(6), Alfred Kersch(6), Franz P. G. Fengler(6), Everett D. Grimley(6), James M. LeBeau(6), Stefan Mueller(6), Christoph Adelmann(6), Ekaterina Yurchuk(5), Han‐Joon Kim(4), Keum Do Kim(4)