Tony Schenk

Engineering · Physical Sciences

38h-index8.6kcitations85works2.42yr avg
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Research Topics

Ferroelectric and Negative Capacitance Devices(67), Semiconductor materials and devices(53), MXene and MAX Phase Materials(29), Ferroelectric and Piezoelectric Materials(24), Advanced Memory and Neural Computing(20)

Publications85 total

Benchmarking Recent Progress on $\text{HfO}_{2}$-based FeRAM
2025
Highly Reliable Hf<sub>1‐X</sub>Zr<sub>X</sub>O<sub>2</sub> with Ultra‐Low Operation Voltage (&lt; 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer
Advanced Materials Technologies·2025· 2 citedOpen Access
Ferroelectric Hafnia: A New Age for FRAM has Started
2024· 1 cited
Demonstration of 1 V Reliable FeRAM Operation: <i>V</i><sub>c</sub> Engineering Using Quasi-Chirality of Hf<sub>1–<i>x</i></sub>Zr<sub><i>x</i></sub>O<sub>2</sub> in a Nanolaminate Structure
ACS Applied Materials & Interfaces·2024· 5 cited
Variability and Reliability Study of Nano-Scale Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Devices Using O<sub>3</sub> Treatment
IEEE Electron Device Letters·2024· 4 cited
Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>
Advanced Functional Materials·2023· 30 citedOpen Access
Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy
Advanced Materials·2022· 45 citedOpen Access
(Hf,Zr)O<sub>2</sub>‐based Ferroelectrics: From Fundamentals to Applications
physica status solidi (RRL) - Rapid Research Letters·2022· 1 citedOpen Access
Influence of substrate stress on in-plane and out-of-plane ferroelectric properties of PZT films
Journal of Applied Physics·2022· 9 citedOpen Access
Influence of tensile vs. compressive stress on fatigue of lead zirconate titanate thin films
Journal of the European Ceramic Society·2021· 19 citedOpen Access
A New Generation of Memory Devices Enabled by Ferroelectric Hafnia and Zirconia
2021· 19 cited
Emerging Fluorite‐ and Wurtzite‐Type Ferroelectrics: From (Hf,Zr)O<sub>2</sub> to AlN and Related Materials
physica status solidi (RRL) - Rapid Research Letters·2021· 2 citedOpen Access
Enhancement of ferroelectricity and orientation in solution-derived hafnia thin films through heterogeneous grain nucleation
Applied Physics Letters·2021· 17 citedOpen Access
Highly conductive low-temperature combustion-derived transparent indium tin oxide thin film
Materials Advances·2020· 15 citedOpen Access
Fully Transparent Friction‐Modulation Haptic Device Based on Piezoelectric Thin Film
Advanced Functional Materials·2020· 41 citedOpen Access
AFE-like Hysteresis Loops from Doped HfO<sub>2</sub>: Field Induced Phase Changes and Depolarization Fields
2020· 5 cited
Memory technology—a primer for material scientists
Reports on Progress in Physics·2020· 98 cited
On the importance of pyrolysis for inkjet-printed oxide piezoelectric thin films
Journal of Materials Chemistry C·2020· 10 citedOpen Access
Toward Thick Piezoelectric HfO<sub>2</sub>‐Based Films
physica status solidi (RRL) - Rapid Research Letters·2019· 56 citedOpen Access
On the Origin of the Large Remanent Polarization in La:HfO<sub>2</sub>
Advanced Electronic Materials·2019· 119 citedOpen Access
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Frequent Co-authors

Uwe Schroeder(37), Thomas Mikolajick(35), Milan Pešić(12), Min Hyuk Park(12), Claudia Richter(11), Michael Hoffmann(8), Johannes Müller(7), Jacob L. Jones(7), Everett D. Grimley(6), James M. LeBeau(6), Christoph Adelmann(6), Alfred Kersch(6), Franz P. G. Fengler(5), Stefan Slesazeck(5), Ekaterina Yurchuk(5), U. Schröder(5), Sergej Starschich(5), Emmanuel Defaÿ(5), Sebastjan Glinšek(5), Stefan Müller(4)