Sergej Starschich

RWTH Aachen University — Germany

Engineering · Physical Sciences

14h-index1.7kcitations20works0.02yr avg
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Research Topics

Ferroelectric and Negative Capacitance Devices(16), Semiconductor materials and devices(9), Ferroelectric and Piezoelectric Materials(7), Advanced Memory and Neural Computing(7), MXene and MAX Phase Materials(6)

Publications20 total

Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO<sub>2</sub>
Advanced Functional Materials·2023· 30 citedOpen Access
Dopants in Chemical Solution-Deposited HfO2 Films
Elsevier eBooks·2019· 6 cited
Contributors
Elsevier eBooks·2019
Effect of Surface/Interface Energy and Stress on the Ferroelectric Properties
Elsevier eBooks·2019· 9 cited
Record-high solar-to-hydrogen conversion efficiency based on a monolithic all-silicon triple-junction IBC solar cell
Solar Energy Materials and Solar Cells·2018· 16 cited
Doped ZrO2 for future lead free piezoelectric devices
Journal of Applied Physics·2018· 39 cited
Ferroelectric and piezoelectric properties of Hf1-xZrxO2 and pure ZrO2 films
Applied Physics Letters·2017· 182 cited
Pulse wake-up and breakdown investigation of ferroelectric yttrium doped HfO2
Journal of Applied Physics·2017· 65 cited
Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics
Advanced Electronic Materials·2017· 138 citedOpen Access
An extensive study of the influence of dopants on the ferroelectric properties of HfO<sub>2</sub>
Journal of Materials Chemistry C·2016· 227 cited
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications
2016· 38 cited
A monolithic all-silicon multi-junction solar device for direct water splitting
Renewable Energy·2016· 6 cited
Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
Applied Physics Letters·2016· 279 cited
Dependence of the SET switching variability on the initial state in HfO<i><sub>x</sub></i>‐based ReRAM
physica status solidi (a)·2015· 23 cited
Ferroelectric phase transitions in nanoscale HfO2 films enable giant pyroelectric energy conversion and highly efficient supercapacitors
Nano Energy·2015· 217 cited
Parameter Study of HfOx-based ReRAM
RWTH Publications (RWTH Aachen)·2015
Chemical Solution Deposition of Ferroelectric Hafnium Oxide for Future Lead Free Ferroelectric Devices
ECS Journal of Solid State Science and Technology·2015· 79 citedOpen Access
About the deformation of ferroelectric hystereses
Applied Physics Reviews·2014· 191 cited
Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes
Applied Physics Letters·2014· 152 cited
Understanding of Trap-Assisted Tunneling Current - Assisted by Oxygen Vacancies in RuOx/SrTiO3/TiN MIM Capacitor for the DRAM Application
2012

Frequent Co-authors

U. Böttger(13), Uwe Schroeder(8), Tony Schenk(7), Thomas Mikolajick(6), Theodor Schneller(6), Stephan Menzel(4), David Griesche(4), Min Hyuk Park(4), Christopher Künneth(3), Alfred Kersch(3), Rainer Waser(3), Franz P. G. Fengler(3), Milan Pešić(3), Chris M. Fancher(3), Ulrich Boettger(2), Halid Mulaosmanovic(2), Camilla La Torre(2), S. Nordmann(2), B. Berghoff(2), Andreas Hessel(2)