Yimeng Sang

Nanjing University — China

Physics and Astronomy · Physical Sciences

14h-index450citations35works3.52yr avg
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Research Topics

GaN-based semiconductor devices and materials(25), Semiconductor Quantum Structures and Devices(9), Ga2O3 and related materials(9), ZnO doping and properties(5), Semiconductor materials and devices(5)

Publications35 total

Electrically pumped single-mode microlasers with omnidirectional radiation for optical broadcasting communication
Science Advances·2026Open Access
Flexible 1T-1FeMTFT Active-matrix Micro-LED Display Utilizing ITO FeMTFT with Record Memory Window of 0.63 V/nm and Low Power Consumption
2025
Impact of Template Patterning Dimensions on the Performance of InGaN-Based Red Light-Emitting Diodes
IEEE Transactions on Electron Devices·2025
Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy
Science Advances·2025· 1 citedOpen Access
Dual-mode operation of GaN-based p-i-n diodes for electroluminescent emission and self-powered photodetection
Optics Letters·2025
Demonstration of 633-nm InGaN-based red light-emitting diodes on a semipolar (11–22) GaN template
Optics Communications·2025
Demonstration of 633-Nm Ingan-Based Red Light-Emitting Diodes on a Semi-Polar (11-22) Gan Template
SSRN Electronic Journal·2025Open Access
Nondestructive Single-Contact Electroluminescence Inspection of LED with High Accuracy
IEEE Electron Device Letters·2025
Investigation of InGaN-based flexible RGB micro-light-emitting diodes and their monolithic integration
Applied Physics Letters·2024· 1 cited
Flexible Active-Matrix Micro-LED Display Utilizing InSnO TFTs with High Mobility of 39.1 cm<sup>2</sup>V<sup>-1</sup>s<sup>-1</sup> and Mass-Production Compatible Process
2024
Self-powered MXene/GaN van der Waals Schottky ultraviolet photodetectors with exceptional responsivity and stability
Applied Physics Reviews·2024· 18 citedOpen Access
GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication
IEEE Transactions on Electron Devices·2024· 6 cited
Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction
IEEE Transactions on Electron Devices·2024· 3 cited
Analysis of the mechanisms by which sputtered AlN nucleation layers enhance the performance of red InGaN-based LEDs
Optics Express·2024· 7 citedOpen Access
Ultra-Small Size Micro-LEDs With Enhanced Efficiency for Near-Eye Display
IEEE Electron Device Letters·2024· 16 cited
Investigation of Ohmic contact to plasma-etched n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N by surface treatment
Semiconductor Science and Technology·2024· 3 citedOpen Access
High-temperature performance of InGaN-based amber micro-light-emitting diodes using an epitaxial tunnel junction contact
Applied Physics Letters·2024· 5 citedOpen Access
Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency
IEEE Electron Device Letters·2023· 16 cited
Achieving InGaN-Based Red Light-Emitting Diodes by Increasing the Growth Pressure of Quantum Wells
IEEE Photonics Technology Letters·2023· 11 cited
Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes
Optics Express·2023· 10 citedOpen Access
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Frequent Co-authors

Tao Tao(28), Bin Liu(27), Zhe Zhuang(25), Rong Zhang(24), Feifan Xu(15), Ting Zhi(14), Junchi Yu(13), Dongqi Zhang(11), Kun Xing(10), Zili Xie(6), Kai Huang(4), Kai Chen(4), Hai Lu(4), Kazuhiro Ohkawa(4), Zhengwei Pan(4), Jiandong Ye(3), Dunjun Chen(3), Di Jiang(3), Xinran Wang(3), Yu Ding(3)