Feifan Xu

Nantong University — China

Physics and Astronomy · Physical Sciences

16h-index1.2kcitations54works3.12yr avg
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Research Topics

GaN-based semiconductor devices and materials(34), Ga2O3 and related materials(15), Advanced Photocatalysis Techniques(10), ZnO doping and properties(9), Semiconductor Quantum Structures and Devices(8)

Publications54 total

Thermal Stability Optimization for Full-Color Micro-LEDs With QDs and SU-8 Patterns
IEEE Transactions on Electron Devices·2025
Investigation on fabrication and physical mechanisms of single-contact AC-driven nano-LED devices
Applied Physics Letters·2025· 1 cited
The diagnostic value of CD101 in smear-negative pulmonary tuberculosis
Journal of Thoracic Disease·2025Open Access
Dual-mode operation of GaN-based p-i-n diodes for electroluminescent emission and self-powered photodetection
Optics Letters·2025
Micro-LED for short distance optical links with low power consumption
Optics Letters·2025· 2 cited
Nondestructive Single-Contact Electroluminescence Inspection of LED with High Accuracy
IEEE Electron Device Letters·2025
Rapid modulation bandwidth test system of micro-LED based on photon excitation
Optics Letters·2024
Green Micro-LED With a Bandwidth Exceeding 2 GHz for 9-Gbps Visible Light Communication Based on SNR Gap-Dependent Bit and Power Loading
Journal of Lightwave Technology·2024· 7 cited
GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication
IEEE Transactions on Electron Devices·2024· 6 cited
Enhanced Performance of GaN-Based Single Contact Micro-LED Driven by AC Power Utilizing the Tunnel Junction
IEEE Transactions on Electron Devices·2024· 3 cited
Ultra-Small Size Micro-LEDs With Enhanced Efficiency for Near-Eye Display
IEEE Electron Device Letters·2024· 16 cited
Investigation of Ohmic contact to plasma-etched n-Al<sub>0.5</sub>Ga<sub>0.5</sub>N by surface treatment
Semiconductor Science and Technology·2024· 3 citedOpen Access
Anisotropic structural and optical properties of semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrates
Semiconductor Science and Technology·2024· 2 citedOpen Access
Optimizing Al Composition in Barriers for InGaN Amber Micro-LEDs With High Wall-Plug Efficiency
IEEE Electron Device Letters·2023· 16 cited
Investigation of highly reflective p-electrodes for AlGaN-based deep-ultraviolet light-emitting diodes
Optics Express·2023· 10 citedOpen Access
Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection
IEEE Transactions on Electron Devices·2023· 16 cited
Wafer-Scale Monolithic Integration of Blue Micro-Light-Emitting Diodes and Green/Red Quantum Dots for Full-Color Displays
IEEE Electron Device Letters·2023· 14 cited
Monolithic Integration of GaN-Based Green Micro-LED and Quasi-Vertical MOSFET Utilizing a Hybrid Tunnel Junction
IEEE Electron Device Letters·2023· 20 cited
GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication
IEEE photonics journal·2023· 6 citedOpen Access
Dominant Mechanism of GaN-Based Single Contact Micro-LED Driven by AC Power
IEEE Electron Device Letters·2023· 13 cited
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Frequent Co-authors

Bin Liu(27), Tao Tao(25), Ting Zhi(19), Rong Zhang(17), Junchi Yu(15), Yimeng Sang(14), Zhe Zhuang(14), Zili Xie(11), Dongqi Zhang(10), Rong Chen(8), Yi Wei(6), Jinyan Xiong(5), Bo Shen(5), Gang Cheng(5), Pengfei Tian(5), Zili Xie(5), Gang Cheng(4), Z. L. Miao(4), Ke Xu(4), Shihao Liang(4)