G.J. Rees

University of Sheffield — United Kingdom

Physics and Astronomy · Physical Sciences

30h-index4.0kcitations190works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(117), Advancements in Semiconductor Devices and Circuit Design(61), Semiconductor materials and devices(59), Advanced Semiconductor Detectors and Materials(41), Advanced Optical Sensing Technologies(32)

Publications190 total

New perspective on passively quenched single photon avalanche diodes: effect of feedback on impact ionization
Optics Express·2012· 15 citedOpen Access
Nonlocal impact ionization and avalanche multiplication
Journal of Physics D Applied Physics·2010· 35 citedOpen Access
Modeling negative feedback in single-photon avalanche diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 12 cited
Model for passive quenching of SPADs
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 16 cited
Introduction
Oxford University Press eBooks·2009
Resources Human and Material
Oxford University Press eBooks·2009
Special Editions 1616–1620: Folios Fit for a King
Oxford University Press eBooks·2009
Bacon's speculative philosophy
Cambridge University Press eBooks·2008· 3 cited
Statistics of self-quenching time in single photon avalanche diodes
2008· 4 cited
Double transit region Gunn diodes
Semiconductor Science and Technology·2007· 6 cited
Effects of dead space on breakdown probability in Geiger mode avalanche photodiode
Journal of Modern Optics·2007· 11 cited
Avalanche Multiplication in InAlAs
IEEE Transactions on Electron Devices·2007· 81 cited
Capacitive Quenching Measurement Circuit for Geiger-Mode Avalanche Photodiodes
IEEE Journal of Selected Topics in Quantum Electronics·2007· 11 cited
Statistics of Avalanche Current Buildup Time in Single-Photon Avalanche Diodes
IEEE Journal of Selected Topics in Quantum Electronics·2007· 31 cited
Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices
IEEE Transactions on Electron Devices·2006· 109 cited
Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end
Measurement Science and Technology·2006· 47 cited
On the maximum number of folds of a piece of paper
Philosophical Magazine Letters·2006· 1 cited
Temperature dependence of avalanche multiplication in submicron silicon devices
2005· 4 cited
Low Noise Avalanche Photodetectors
2005
InGaAs/GaAs Piezoelectric Lasers
2005
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Frequent Co-authors

J.P.R. David(34), S.A. Plimmer(18), R.C. Tozer(15), Chee Hing Tan(14), P.N. Robson(11), R. Grey(11), Duu Sheng Ong(9), M. Hopkinson(8), Beng Koon Ng(8), D C Herbert(7), Jo Shien Ng(6), J. P. R. David(5), K.F. Li(4), G. M. Dunn(4), R. Ghin(4), D.R. Wight(3), A.S. Pabla(3), J. Woodhead(3), J.P.R. David(3), M.A. Pate(3)