S. Shanfield

RTX (United States) — United States

Engineering · Physical Sciences

12h-index445citations22works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Radio Frequency Integrated Circuit Design(10), Semiconductor materials and devices(9), GaN-based semiconductor devices and materials(8), Semiconductor Quantum Structures and Devices(5), Advanced Power Amplifier Design(4)

Publications22 total

Hot-electron-induced Electro-luminescence Of GaAs Field-effect And Bipolar Transistors
2005· 3 cited
Hot-electron-induced degradation of metal-semiconductor field-effect transistors
2005· 19 cited
A high linearity, high efficiency pseudomorphic HEMT
2003· 4 cited
One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching
2003· 30 cited
The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT
2002· 7 cited
A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier
2002· 23 cited
Ka-band GaAs HBT PIN diode switches and phase shifters
2002· 19 cited
An AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for X- and Ku-band power applications
2002· 23 cited
Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
2002· 36 cited
High gain, pulsed power HBTs
Solid-State Electronics·1995
A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications
IEEE Electron Device Letters·1993· 40 cited
An AlGaAs/InGaAs pseudomorphic high electron mobility transistor with improved breakdown voltage for X- and Ku-band power applications
IEEE Transactions on Microwave Theory and Techniques·1993· 80 cited
Large periphery, high power pseudomorphic HEMTs
1993· 20 cited
High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 8 cited
Molecular-beam epitaxial growth of high quality, double channel AlGaAs/InGaAs pulse-doped pseudomorphic high electron mobility transistors
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992
Formation of Thick Metal Structures on GaAs MMICs Using Image Reversal Lithography and Evaporated Metal Deposition
Journal of The Electrochemical Society·1989· 1 cited
Process Characterization of PSG and BPSG Plasma Deposition
Journal of The Electrochemical Society·1984· 12 cited
Process Characterization of a Load-Locked, Reactive Ion Etching System
MRS Proceedings·1984· 1 cited
<title>Cost Estimates For Amorphous Silicon Deposition Processes</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1983
Ion beam synthesis of cubic boron nitride
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1983· 103 cited
page 1 of 2Next →

Frequent Co-authors

L. Aucoin(11), A. Platzker(8), W. E. Hoke(7), P. S. Lyman(7), Jong‐Chin Huang(5), P. Saledas(5), Gordon Jackson(4), W. Boulais(3), Y.A. Tkachenko(3), C.J. Wei(3), James C. M. Hwang(3), T. D. Harris(3), Robert D. Grober(3), T.E. Kazior(3), Anthony Bertrand(3), Fred Schindler(3), R. G. Wolfson(2), D. Atwood(2), D. M. Hwang(2), M. Vafiades(2)