L. Aucoin

RTX (United States) — United States

Physics and Astronomy · Physical Sciences

10h-index280citations21works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(14), Radio Frequency Integrated Circuit Design(12), Semiconductor materials and devices(9), GaN-based semiconductor devices and materials(6), Advancements in Semiconductor Devices and Circuit Design(6)

Publications21 total

Hot-electron-induced Electro-luminescence Of GaAs Field-effect And Bipolar Transistors
2005· 3 cited
Hot-electron-induced degradation of metal-semiconductor field-effect transistors
2005· 19 cited
A high linearity, high efficiency pseudomorphic HEMT
2003· 4 cited
One watt, very high efficiency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching
2003· 30 cited
The effect of channel dimensions on the millimeter-wave power performance of a pseudomorphic HEMT
2002· 7 cited
K through Ka-band driver and power amplifiers
2002· 9 cited
High efficiency 40 watt PsHEMT S-band MIC power amplifiers
2002· 13 cited
A high power Q-band GaAs pseudomorphic HEMT monolithic amplifier
2002· 23 cited
Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
2002· 36 cited
High performance millimeter wave AlInAs/GaInAs/InP HEMTs with individually grounded source finger vias
2002· 2 cited
Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages
2002· 17 cited
High gain AlInAs/GaInAs/InP HEMT's with individually grounded source finger vias
IEEE Electron Device Letters·1995· 6 cited
High efficiency single pulse doped Al <sub>0.60</sub> In <sub>0.40</sub> As/GaInAs/InPHEMTs for Q-band power applications
Electronics Letters·1995· 4 cited
DC and RF characteristics of double recessed anddouble pulse doped AlInAs/GaInAs/InP HEMTs
Electronics Letters·1995· 14 cited
InAlAs/InGaAs high electron mobility transistors on low temperature InAlAs buffer layers by metalorganic chemical vapor deposition
Applied Physics Letters·1995· 14 cited
Thermally stable AuGe–Au ohmic contacts for single doped InP high electron mobility transistor structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1995· 3 citedOpen Access
High power, high efficiency PHEMTs for use at 8 GHz
1995· 8 cited
A double-recessed Al/sub 0.24/GaAs/In/sub 0.16/GaAs pseudomorphic HEMT for Ka- and Q-band power applications
IEEE Electron Device Letters·1993· 40 cited
Large periphery, high power pseudomorphic HEMTs
1993· 20 cited
High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 8 cited
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Frequent Co-authors

S. Shanfield(11), W. E. Hoke(10), A. Platzker(8), T.E. Kazior(7), P. S. Lyman(6), Kahyun Hur(6), R.A. McTaggart(6), P. J. Lemonias(4), R. Wohlert(4), Jong‐Chin Huang(3), W. Boulais(3), Y.A. Tkachenko(3), C.J. Wei(3), James C. M. Hwang(3), T. D. Harris(3), Robert D. Grober(3), Anthony Bertrand(3), H. T. Hendriks(3), M.P. Ventresca(3), J.P. Wendler(2)