N. Loubet

Consejo Nacional de Investigaciones Científicas y Técnicas — Argentina

Engineering · Physical Sciences

18h-index1.2kcitations92works3.52yr avg
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Research Topics

Semiconductor materials and devices(64), Advancements in Semiconductor Devices and Circuit Design(60), Integrated Circuits and Semiconductor Failure Analysis(14), Thin-Film Transistor Technologies(12), Silicon and Solar Cell Technologies(12)

Publications92 total

Advanced Group-IV Epitaxy and Integration Strategies for GAA Nanosheet Transistor Performance Enhancement
2025
Study of the interplay between geometry and chemistry in nanoscale hydration
Journal of Physics Condensed Matter·2025
The nature of water interactions and the molecular signatures of hydrophobicity
The Journal of Chemical Physics·2025· 3 cited
Nanoscale water behavior and its impact on adsorption: A case study with CNTs and diclofenac
The Journal of Chemical Physics·2025· 4 cited
Study of Protein Hydration Water with the <i>V</i><sub>4S</sub> Structural Index: Focus on Binding Site Description
The Journal of Physical Chemistry B·2024· 8 cited
Role of hydrogen-bond coordination defects in the structural relaxation of supercooled water
Physical review. E·2024
A structural determinant of the behavior of water at hydration and nanoconfinement conditions
The European Physical Journal E·2024· 8 cited
The nature of water interactions and the molecular signatures of hydrophilicity
arXiv (Cornell University)·2024Open Access
Water at the nanoscale: From filling or dewetting hydrophobic pores and carbon nanotubes to “sliding” on graphene
The Journal of Chemical Physics·2024· 2 cited
A water structure indicator suitable for generic contexts: Two-liquid behavior at hydration and nanoconfinement conditions and a molecular approach to hydrophobicity and wetting
The Journal of Chemical Physics·2024· 10 citedOpen Access
A structural determinant of the behavior of water at hydration and nanoconfinement conditions
arXiv (Cornell University)·2023Open Access
Turning an energy-based defect detector into a multi-molecule structural indicator for water
The Journal of Chemical Physics·2023· 9 cited
Optical and electrical diagnostics of industrial plasma reactors: measuring the relevant physical quantities to assist process development
HAL (Le Centre pour la Communication Scientifique Directe)·2022
Etching and selectivity mechanisms of silicon-based materials in remote NF3/NH3(or H2) plasma, for the development of selective plasma processes
theses.fr (ABES)·2022Open Access
Compressive Strained Si<sub>1-X</sub>Ge<sub>x</sub> Channel for High Performance Gate-All-Around Nanosheet Transistors
ECS Meeting Abstracts·2022
Cycling process in remote plasma source for selective etching with nanometric control
HAL (Le Centre pour la Communication Scientifique Directe)·2021
Highly Selective SiGe Dry Etch Process for the Enablement of Stacked Nanosheet Gate-All-Around Transistors
ECS Meeting Abstracts·2021· 2 cited
Surface and plasma characterization of a self-limited two step etch process for SiN spacer etching applications.
HAL (Le Centre pour la Communication Scientifique Directe)·2021
Enablement of Next Generation Nanosheet Technology
2021· 1 cited
Enabling Next Generation CMOS by Novel EOT Scaling Module
Symposium on VLSI Technology·2021· 1 cited
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Frequent Co-authors

T. Skotnicki(23), S. Denorme(17), D. Dutartre(14), F. Leverd(14), S. Monfray(13), F. Bœuf(13), S. Barnola(11), P. Gouraud(11), P. Perreau(10), B. Doris(10), G. Bidal(10), C. Fenouillet-Béranger(9), T. Salvetat(9), G. Ghibaudo(8), O. Faynot(7), C. Laviron(7), R. Wacquez(7), D. Chanemougame(7), J.-L. Huguenin(7), L. Grenouillet(6)