H.-J. Gossmann

Applied Materials (United States) — United States

Engineering · Physical Sciences

19h-index2.0kcitations67works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(39), Semiconductor materials and devices(35), Integrated Circuits and Semiconductor Failure Analysis(33), Advancements in Semiconductor Devices and Circuit Design(20), Semiconductor materials and interfaces(19)

Publications67 total

The role of carbon capping and Ar pressure on SiC surface degradation during high temperature annealing
Applied Surface Science·2024
4H to 3C Polytypic Transformation in Al+ Implanted SiC During High Temperature Annealing
Electronic Materials Letters·2023· 5 cited
The scaled FinFET well formation using heated implantation
MRS Advances·2022
Analysis in Materials Science
2020· 4 cited
p-Type MOSFET Contact Resistance Improvement by Conformal Plasma Doping and Nanosecond Laser Annealing
IEEE Electron Device Letters·2019· 9 cited
Advanced Arsenic Doped Epitaxial Growth for Source Drain Extension Formation in Scaled FinFET Devices
2018· 10 cited
FinFET IO Device Performance Gain with Heated Implantation
2018· 2 cited
Two-terminal diode steering element for 3D X-bar memory
2012· 2 cited
Improving device performance and variability for 28nm and beyond low power SoC technology using advanced implant solutions
2012· 3 cited
Optimizing state-of-the-art 28nm core/SRAM device performance by cryo-implantation technology
2012· 6 cited
Benefits of cryo-implantation for 28 nm NMOS advanced junction formation
Semiconductor Science and Technology·2012· 14 cited
Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device Fabrication
AIP conference proceedings·2008
Stress dependence and poly-pitch scaling characteristics of (110) PMOS drive current
2007· 12 cited
Ultra-shallow junctions for novel device architectures beyond the 65 nm node
2004· 2 cited
Laser thermal processing of amorphous silicon gates to reduce poly-depletion in CMOS devices
IEEE Transactions on Electron Devices·2004· 12 cited
Junction formation in advanced planar and vertical devices
2004· 1 cited
On the FinFET extension implant energy
IEEE Transactions on Nanotechnology·2003· 29 cited
Comparison of B and BF/sub 2/ source/drain extension implants for PMOS transistors with thin gate oxides
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432)·2003
Impact of metal/oxide interface on DC and RF performance of depletion-mode GaAs MOSFET employing MBE grown Ga2O3(Gd2O3) as gate dielectric
Journal of Crystal Growth·2003· 21 cited
The ballistic nano-transistor
2003· 76 cited
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Frequent Co-authors

C.S. Rafferty(12), D. C. Jacobson(12), Aditya Agarwal(11), D. J. Eaglesham(10), J. M. Poate(8), Lourdes Pelaz(8), George H. Gilmer(7), M. Jaraı́z(6), T. Boone(6), H.-H. Vuong(6), H. S. Luftman(5), G. Timp(5), R. N. Kleiman(5), F. Klemens(5), S. Moccio(5), T. Sorsch(5), K.K. Bourdelle(5), J. Y. Wu(5), B. Colombeau(5), B. N. Guo(5)