Janna R. B. Casady

Engineering · Physical Sciences

6h-index75citations16works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Silicon Carbide Semiconductor Technologies(16), Semiconductor materials and devices(10), Multilevel Inverters and Converters(4), Electromagnetic Compatibility and Noise Suppression(4), Copper Interconnects and Reliability(3)

Publications16 total

Uniformity and Morphology of 10 x 100mm 4° Off-Axis 4H-SiC Epitaxial Layers and their Effect on Device Performance
Materials science forum·2013· 7 cited
High Uniformity with Reduced Surface Roughness of Chloride Based CVD Process on 100mm 4° Off-Axis 4H-SiC
Materials science forum·2012· 9 cited
Reduction of Triangular Defects on 100mm 4° off-axis 4H-SiC using a Chloride Based CVD process
MRS Proceedings·2012· 1 cited
Increase of SiC Substrate Resistance Induced by Annealing
Materials science forum·2010· 14 cited
Surface Morphology Improvement and Repeatable Doping Characterization of 4H-SiC Epitaxy Grown on 4° Off-Axis 4H-SiC Wafers
Materials science forum·2009· 3 cited
High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
Materials science forum·2008· 8 cited
High-Temperature Operation of 50 A (1600 A/cm<sup>2</sup>), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications
Materials science forum·2008· 8 cited
Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl
MRS Proceedings·2008· 5 cited
Scalable SiC Power Switches for Applications in More Electric Vehicles (Preprint)
Defense Technical Information Center (DTIC)·2007
Fast Switching (41 MHz), 2.5 mΩ•cm<sup>2</sup>, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
Materials science forum·2006· 4 cited
Highly Uniform SiC Epitaxy for MESFET Fabrication
Materials science forum·2006· 1 cited
RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction Transistors
Materials science forum·2006· 5 cited
High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications
MRS Proceedings·2006
A Review of SiC Power Switch: Achievements, Difficulties and Perspectives
Materials science forum·2004· 8 cited
Effect of High-Dose Aluminium Implantation on 4H-SiC Oxidation
Materials science forum·2004· 2 cited
Design and Implementation of the Optimized Edge Termination in 1.8 kV 4H-SiC PiN Diodes
Materials science forum·2004Open Access

Frequent Co-authors

Jeff B. Casady(11), Michael S. Mazzola(7), V. Bondarenko(6), Swapna Sunkari(5), Igor Sankin(5), Hrishikesh Das(4), J. Neil Merrett(4), Janice Mazzola(4), Timothy R. Oldham(3), Li Cheng(3), Carl Hoff(3), W.A. Draper(2), P. Martin(2), David C. Sheridan(2), James D. Scofield(2), Josh Rodgers(2), Robin L. Kelley(2), Yaroslav Koshka(2), Esteban Romano(2), Thomas L. Straubinger(1)