Swapna Sunkari

Engineering · Physical Sciences

7h-index194citations53works1.52yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(39), Silicon and Solar Cell Technologies(20), Semiconductor materials and devices(19), Thin-Film Transistor Technologies(12), Crystallization and Solubility Studies(11)

Publications53 total

Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2024· 2 citedOpen Access
The Role of Defects on SiC Device Performance and Ways to Mitigate them
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2024· 1 citedOpen Access
(Invited) Challenges in Fabricating and Scaling up Silicon Carbide Wafers and Devices
ECS Meeting Abstracts·2023· 1 cited
Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
Materials science forum·2023· 4 citedOpen Access
Investigation into the Influence of Substrate Dislocations in 4H-SiC on the Subsequent Epitaxy and Resultant Device Performance
ECS Meeting Abstracts·2022
A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability
Materials science forum·2022· 6 citedOpen Access
SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
Materials science forum·2022· 5 citedOpen Access
Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
Materials science forum·2022· 5 citedOpen Access
The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
Japanese Journal of Applied Physics·2021· 23 cited
(Invited) Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC
ECS Meeting Abstracts·2021
(Invited) Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC
ECS Transactions·2021· 1 cited
The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles
2021· 1 cited
Is there a perfect SiC MosFETs Device on an imperfect crystal?
2021· 17 cited
(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication
ECS Meeting Abstracts·2020
(Invited) P-Type and N-Type Channeling Ion Implantation of SiC and Implications for Device Design and Fabrication
ECS Transactions·2020· 11 cited
Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance
Materials science forum·2020· 22 cited
(Invited) Influence of Wafering, CMP and Subsurface Damage on Epitaxial Defects and Surface Quality in SiC
ECS Meeting Abstracts·2019
Effect of Defects in Silicon Carbide Epitaxial Layers on Yield and Reliability
Materials science forum·2019· 14 cited
Avalanche rugged 1200 V 80 m Ω SiC MOSFETs with state-of-the-art threshold voltage stability
2018· 7 cited
<i>(Invited) </i>Characterization of UV Excitation Accelerated Material Changes on as-Grown SiC Epitaxial Layers and Their Impact on Defect Detection
ECS Transactions·2018· 2 cited
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Frequent Co-authors

Hrishikesh Das(35), Joshua Justice(17), Martin Domeij(10), Janice Mazzola(7), Michael S. Mazzola(7), Mahendra Yadav(7), Hans Naas(6), Fredrik Allerstam(6), T. Kuroi(5), Thomas Neyer(5), Janna R. B. Casady(5), Andrey O. Konstantinov(5), Ryota Wada(4), Jeffery L. Wyatt(4), Jimmy Franchi(4), Sara Kochoska(4), Ashutosh Kumar Singh(4), Suryabhan Singh(4), Daya Shankar Pandey(4), Jan Chochol(3)