Joshua Justice

Johnson & Johnson (United States) — United States

Engineering · Physical Sciences

12h-index634citations46works2.82yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(18), Silicon and Solar Cell Technologies(12), GaN-based semiconductor devices and materials(8), Semiconductor materials and devices(8), Acoustic Wave Resonator Technologies(6)

Publications46 total

Insight Into Current BK Polyomavirus Research Efforts: BK Day Meeting 2024
Transplantation·2025
Multi-epitope immunocapture of huntingtin reveals striatum-selective molecular signatures
Molecular Systems Biology·2025· 2 citedOpen Access
Multi-epitope immunocapture of huntingtin reveals striatum-selective molecular signatures
2024· 2 citedOpen Access
Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2024· 2 citedOpen Access
The Role of Defects on SiC Device Performance and Ways to Mitigate them
Defect and diffusion forum/Diffusion and defect data, solid state data. Part A, Defect and diffusion forum·2024· 1 citedOpen Access
DNA-PK and ATM drive phosphorylation signatures that antagonistically regulate cytokine responses to herpesvirus infection or DNA damage
Cell Systems·2024· 10 citedOpen Access
(Invited) Challenges in Fabricating and Scaling up Silicon Carbide Wafers and Devices
ECS Meeting Abstracts·2023· 1 cited
Sirtuin 2 promotes human cytomegalovirus replication by regulating cell cycle progression
mSystems·2023· 11 citedOpen Access
Pulsed Forward Bias Body Diode Stress of 1200 v SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
Materials science forum·2023· 4 citedOpen Access
Intercellular communication within the virus microenvironment affects the susceptibility of cells to secondary viral infections
Science Advances·2023· 42 citedOpen Access
Investigation into the Influence of Substrate Dislocations in 4H-SiC on the Subsequent Epitaxy and Resultant Device Performance
ECS Meeting Abstracts·2022
A Deeper Look into the Effects of Extended Defects in SiC Epitaxial Layers on Device Performance and Reliability
Materials science forum·2022· 6 citedOpen Access
SiC Diode with Vertical Superjunction Realized Using Channeled Implant and Multi-Step Epitaxial Growth
Materials science forum·2022· 5 citedOpen Access
Pulsed Forward Bias Body Diode Stress of 1700 V SiC MOSFETs with Individual Mapping of Basal Plane Dislocations
Materials science forum·2022· 5 citedOpen Access
Nuclear antiviral innate responses at the intersection of DNA sensing and DNA repair
Trends in Microbiology·2022· 23 citedOpen Access
BK Polyomavirus Requires the Mismatch Repair Pathway for DNA Damage Response Activation
Journal of Virology·2022· 8 citedOpen Access
The exceptional advantages of channeling implantation into 4H-SiC to make abrupt deep profiles
Japanese Journal of Applied Physics·2021· 23 cited
(Invited) Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC
ECS Meeting Abstracts·2021
(Invited) Detection of Dislocations Using X-Ray Diffraction Imaging (Topography) KOH Etching and Their Evolution after Epitaxial Growth in 4H-SiC
ECS Transactions·2021· 1 cited
The Exceptional Advantages of Channeling Implantation into 4H-SiC to make Abrupt Deep Profiles
2021· 1 cited
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Frequent Co-authors

Hrishikesh Das(19), Swapna Sunkari(19), Ileana M. Cristea(9), D. Korakakis(9), Josiah E. Hutton(5), T. Kuroi(5), L. E. Rodak(5), Martin Domeij(5), Brandy Verhalen(4), Mengxi Jiang(4), Ryota Wada(4), K. Lee(4), Lawrence A. Hornak(4), Sara Kochoska(4), Jan Chochol(3), Todd M. Greco(3), Danielle M. Hamann(3), Krister Gumaelius(3), Jimmy Franchi(3), Fredrik Allerstam(3)