A. Laubsch

OSRAM (Germany) — Germany

Physics and Astronomy · Physical Sciences

13h-index905citations23works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(21), Semiconductor Quantum Structures and Devices(14), Ga2O3 and related materials(7), ZnO doping and properties(4), Metal and Thin Film Mechanics(4)

Publications23 total

Monolitically grown dual wavelength InGaN LEDs for improved CRI
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 4 cited
Green high‐power light sources using InGaN multi‐quantum‐well structures for full conversion
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 17 cited
Investigation of the carrier distribution in InGaN‐based multi‐quantum‐well structures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 24 cited
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
Proceedings of the IEEE·2010· 30 cited
Recent Progress in High Efficiency InGaN LEDs
2010· 4 cited
Three- to two-dimensional transition in electrostatic screening of point charges at semiconductor surfaces studied by scanning tunneling microscopy
Physical Review B·2009· 17 cited
High-Power and High-Efficiency InGaN-Based Light Emitters
IEEE Transactions on Electron Devices·2009· 336 cited
On the origin of IQE‐‘droop’ in InGaN LEDs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 113 cited
New developments in green LEDs
physica status solidi (a)·2009· 90 cited
Electronic properties of dislocations in GaN investigated by scanning tunneling microscopy
Applied Physics Letters·2009· 33 cited
Quality and thermal stability of thin InGaN films
Journal of Crystal Growth·2009· 64 cited
Luminescence properties of thick InGaN quantum‐wells
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 26 citedOpen Access
Bias dependent spatially resolved photoluminescence spectroscopy and photocurrent measurements of InGaN/GaN LED structures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 4 cited
Surface states and origin of the Fermi level pinning on nonpolar GaN(11¯00) surfaces
Applied Physics Letters·2008· 61 cited
Multi-quantum well emission from blue InGaN-based laser
2008
Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes
Verhandlungen der Deutschen Physikalischen Gesellschaft·2008
Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substrate
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 2 cited
Measurement and simulation of the lateral mode profile of broad ridge 405 nm (Al,In)GaN laser diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 12 cited
Green ThinGaN power‐LED demonstrates 100 lm
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 31 cited
Defect‐related recombination in InGaN‐lasers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 6 cited
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Frequent Co-authors

M. Sabathil(10), Matthias Peter(8), Berthold Hahn(5), N. Linder(5), Tobias Meyer(5), Marc Schillgalies(5), Uwe Strauß(5), B. Hahn(5), J. Baur(4), Werner Bergbauer(4), Martin Straßburg(4), Desirée Queren(4), Ulrich T. Schwarz(4), K. Streubel(3), G. Brüderl(3), Ph. Ebert(3), Bastian Galler(3), S. Lutgen(3), Hans Lugauer(2), Stephan Lutgen(2)