John L. Sturtevant

Baylor University — United States

Engineering · Physical Sciences

12h-index520citations110works1.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advancements in Photolithography Techniques(98), Integrated Circuits and Semiconductor Failure Analysis(35), Industrial Vision Systems and Defect Detection(31), Electron and X-Ray Spectroscopy Techniques(27), Advanced Surface Polishing Techniques(22)

Publications110 total

Re-analysis of land used for energy: Comparison of spatially explicit observations and literature sources
Cleaner Energy Systems·2025Open Access
An integrated verification flow for curvilinear mask
2024· 2 cited
Importance sampling in Gaussian random field EUV stochastic model for quantification of stochastic variability of EUV vias
2023· 2 cited
EUV full-chip curvilinear mask options for logic via and metal patterning
2023· 3 cited
Impact of mask rule constraints on ideal sraf placement
2023
Compact modeling of stochastics and application in OPC
2023· 1 cited
Rapid full-chip curvilinear OPC for advanced logic and memory
2021· 10 cited
Design for Manufacturing and Design Process Technology Co-Optimization
2020· 3 cited
Probability prediction of EUV process failure due to resist-exposure stochastic: applications of Gaussian random fields excursions and Rice's formula
2020· 8 cited
Real-time full-wafer design-based inter-layer virtual metrology
2020
Stochastic model prediction of pattern-failure
2020· 1 cited
Process window-based feature and die failure rate prediction
2019
Enabling enhanced EUV lithographic performance using advanced SMO, OPC, and RET
2018· 8 cited
Impact of aberrations in EUV lithography: metal to via edge placement control
2018
Edge placement errors in EUV from aberration variation
2017· 4 cited
Aerial image metrology for OPC modeling and mask qualification
2017· 5 cited
Interlayer verification methodology for multi-patterning processes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017
Effective use of aerial image metrology for calibration of OPC models
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017· 2 cited
Two-layer critical dimensions and overlay process window characterization and improvement in full-chip computational lithography
Journal of Micro/Nanolithography MEMS and MOEMS·2016· 3 cited
Multi-layer VEB modeling: capturing interlayer etch process effects for multi-patterning process
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2016· 2 cited
page 1 of 6Next →

Frequent Co-authors

Thuy Do(10), Peter De Bisschop(7), Ir Kusnadi(6), Kostas Adam(6), Hiroyuki Shindo(5), Germain Fenger(5), Steven J. Holmes(5), Daisuke Hibino(5), Edita Tejnil(4), Yuri Granik(4), Yutaka Hojyo(4), Srividya Jayaram(4), John S. Petersen(3), Chris A. Mack(3), N. Cave(3), Carla M. Nelson-Thomas(3), Jeroen Van de Kerkhove(3), Tim Lin(3), Peter Buck(3), Franklin D. Kalk(3)