Somsak Panyakeow

Chulalongkorn University — Thailand

Physics and Astronomy · Physical Sciences

15h-index974citations189works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(144), Quantum Dots Synthesis And Properties(76), Nanowire Synthesis and Applications(53), Advanced Semiconductor Detectors and Materials(47), Semiconductor Lasers and Optical Devices(39)

Publications189 total

High verticality vapor–liquid–solid growth of GaAs<sub>0.99</sub>Bi<sub>0.01</sub> nanowires using Ga–Bi assisted catalytic droplets
Nanoscale Advances·2023· 1 citedOpen Access
Competitive Relaxation Mechanisms in Strained Epitaxial InGaSb on GaSb Substrate
Journal of Physics Conference Series·2023Open Access
Growth evolution and polarization-dependent photoluminescence of lateral InSb/CdTe nanowires
Journal of Crystal Growth·2023· 1 cited
Degradation mechanisms of annealed GaAsPBi films grown by molecular beam epitaxy
Surfaces and Interfaces·2023· 1 cited
Direct growth of InSb nanowires on CdTe (0 0 1) substrates by molecular beam epitaxy
Materials Science and Engineering B·2022· 2 cited
GaAs/GaAsPBi core–shell nanowires grown by molecular beam epitaxy
Nanotechnology·2021· 3 cited
Growth-related photoluminescence properties of InSb/GaAs self-assembled quantum dots grown on (001) Ge substrates
Materials Science and Engineering B·2021
Optical properties of lattice-matched GaAsPBi multiple quantum wells grown on GaAs (001)
Semiconductor Science and Technology·2021· 9 cited
Light-induced circuit parameter variation in self-assembled quantum-dot photovoltaic cell
Materials Today Proceedings·2021
Investigation of hybrid InSb and GaSb quantum nanostructures
Microelectronic Engineering·2020· 3 cited
Raman peak shifts by applied magnetic field in InSb/Al<sub> x </sub>In<sub>1−x </sub>Sb superlattices
Materials Research Express·2020· 1 citedOpen Access
GaAsPBi epitaxial layer grown by molecular beam epitaxy
Semiconductor Science and Technology·2020· 8 cited
Equivalent Circuit Parameters of Hybrid Quantum-Dot Solar Cells
Materials Today Proceedings·2020· 5 cited
Effect of substrate temperature on GaAs nanowires growth directly on Si (111) substrates by molecular beam epitaxy
Materials Today Proceedings·2020· 1 cited
Investigation of the Morphology of InSb/InAs Quantum Nanostripe Grown by Molecular Beam Epitaxy
physica status solidi (b)·2019· 1 cited
Photoluminescence properties as a function of growth mechanism for GaSb/GaAs quantum dots grown on Ge substrates
Journal of Applied Physics·2019· 5 cited
Molecular Beam Epitaxial Growth of InSb and AlSb Heterostructure on InSb Substrates
2019
Investigation of Morphology of InSb/InAs Quantum Nano-Stripe Grown by Molecular Beam Epitaxy
2019
Integration of AlGaSb/GaSb Heterostructure and InSb/GaSb Quantum Nano-Stripes
2019
AlGaAs/GaAs Heterostructure with Hybrid InSb/GaAs and GaSb/GaAs Quantum Dots and Its Optical Characteristics
2019
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Frequent Co-authors

Songphol Kanjanachuchai(23), Somchai Ratanathammaphan(17), Supachok Thainoi(16), Suwit Kiravittaya(12), S. Suraprapapich(8), Suwat Sopitpan(8), Dusit Kruangam(5), Wirote Boonkosum(4), Poonyasiri Boonpeng(4), P. Changmuang(4), Wipakorn Jevasuwan(4), Maetee Kunrugsa(4), R. Songmuang(3), Montri Sawadsaringkarn(3), Thanavorn Poempool(3), G. A. Zon(3), Noppadon Nuntawong(3), Visittapong Yordsri(3), Chanchana Thanachayanont(3), Cho Cho Thet(3)