R. Songmuang

Physics and Astronomy · Physical Sciences

30h-index2.7kcitations66works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(30), Nanowire Synthesis and Applications(26), GaN-based semiconductor devices and materials(19), Quantum Dots Synthesis And Properties(12), Photonic and Optical Devices(10)

Publications66 total

AlN Nanowire Based Vertically Integrated Piezoelectric Nanogenerators
arXiv (Cornell University)·2024Open Access
Nanometer-scale monitoring of quantum-confined Stark effect and emission efficiency droop in multiple GaN/AlN quantum disks in nanowires
Physical review. B./Physical review. B·2016· 21 citedOpen Access
Determination of the Optimal Shell Thickness for Self-Catalyzed GaAs/AlGaAs Core–Shell Nanowires on Silicon
Nano Letters·2016· 25 citedOpen Access
Quantum Transport in GaN/AlN Double-Barrier Heterostructure Nanowires
Figshare·2016· 71 citedOpen Access
Alloy inhomogeneity and carrier localization in AlGaN sections and AlGaN/AlN nanodisks in nanowires with 240–350 nm emission
Applied Physics Letters·2014· 35 citedOpen Access
Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots
Journal of Applied Physics·2014· 15 cited
Nanoswitches & PiezoNEMS for on-chip energy control and harvesting
HAL (Le Centre pour la Communication Scientifique Directe)·2013
AlGaN/AlN quantum dots for UV light emitters
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 11 cited
Nano−Newton Transverse Force Sensor Using a Vertical GaN Nanowire based on the Piezotronic Effect
HAL (Le Centre pour la Communication Scientifique Directe)·2013
Integrated Micro & Nano Devices for Energy Harvesting & Control
HAL (Le Centre pour la Communication Scientifique Directe)·2012
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Journal of Crystal Growth·2012· 29 citedOpen Access
PiezoNEMS: Semiconductor nanowires and heterostructures for sensing and energy harvesting
2012· 1 cited
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
arXiv (Cornell University)·2012Open Access
Room-Temperature Photodetection Dynamics of Single GaN Nanowires
Nano Letters·2011· 147 cited
GaN-based nanowire photodetectors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 3 cited
Spontaneous formation of well-defined Al rich shell structures in AlxGa1-xN/GaN nanowires
arXiv (Cornell University)·2011Open Access
Double strain state in a single GaN/AlN nanowire: Probing the core-shell effect by ultraviolet resonant Raman scattering
Physical Review B·2011· 33 citedOpen Access
NEMS nanostructures with enhanced piezoresistive and piezoelectric properties. Application to sensor devices and energy harvesting
2011· 1 cited
Identification of III–N nanowire growth kinetics via a marker technique
Nanotechnology·2010· 62 cited
GaN/AlN quantum disc single‐nanowire photodetectors
physica status solidi (a)·2010· 10 cited
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Frequent Co-authors

Oliver G. Schmidt(28), Armando Rastelli(17), Suwit Kiravittaya(17), E. Monroy(8), Stefan Mendach(7), Giovanni Costantini(6), Carlos Manzano(6), Klaus Kern(6), M. den Hertog(6), Somsak Panyakeow(6), Mohamed Benyoucef(5), N. Y. Jin-Phillipp(5), B. Daudin(4), Christoph Deneke(4), Catherine Bougerol(4), Gwénolé Jacopin(4), Lorenzo Rigutti(4), Maria Tchernycheva(4), F. H. Julien(4), P. Acosta-Diaz(3)