Arto Javanainen

University of Padua — Italy

Engineering · Physical Sciences

25h-index2.0kcitations98works1.02yr avg
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Research Topics

Radiation Effects in Electronics(64), Semiconductor materials and devices(38), Integrated Circuits and Semiconductor Failure Analysis(34), Silicon Carbide Semiconductor Technologies(22), Radiation Detection and Scintillator Technologies(13)

Publications94 total

Effects of Incident Angle on Single-Event Leakage Current Degradation in Heavy-Ion Irradiated 1800- and 4500-V SiC Power MOSFETs
IEEE Transactions on Nuclear Science·2025Open Access
Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETs
2025
Proton Energy Dependence of SiC Power MOSFET Single-Event Burnout Sensitivity
IEEE Transactions on Nuclear Science·2025· 3 citedOpen Access
Temperature Dependence of Heavy-Ion-Induced Leakage Current in SiC Power MOSFETs
IEEE Transactions on Nuclear Science·2025· 3 citedOpen Access
Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-nm SDRAMs
IEEE Transactions on Nuclear Science·2023· 4 citedOpen Access
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Materials science forum·2023· 14 citedOpen Access
High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances
IEEE Transactions on Nuclear Science·2023· 19 citedOpen Access
Proton Direct Ionization in Sub-Micron Technologies: Test Methodologies and Modeling
IEEE Transactions on Nuclear Science·2023· 7 citedOpen Access
Proton Irradiation-Induced Reliability Degradation of SiC Power MOSFET
IEEE Transactions on Nuclear Science·2023· 17 citedOpen Access
Effect of 20 MeV Electron Radiation on Long Term Reliability of SiC Power MOSFETs
IEEE Transactions on Nuclear Science·2023· 6 citedOpen Access
Properties of Gd-Doped Sol-Gel Silica Glass Radioluminescence under Electron Beams
Sensors·2022· 5 citedOpen Access
Heavy Ion and Proton Induced SEUs in Very Deep Sub-Micron Technologies
2022· 1 cited
Proton Direct Ionization Upsets at Tens of MeV
IEEE Transactions on Nuclear Science·2022· 5 citedOpen Access
Space Radiation Effects in Electronics
River Publishers eBooks·2022· 3 cited
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
IEEE Transactions on Nuclear Science·2022· 6 citedOpen Access
Proton Direct Ionization in Sub-Micron Technologies: Numerical Method for RPP Parameter Extraction
IEEE Transactions on Nuclear Science·2022· 6 cited
Semi-empirical parameters for electronic stopping force model. Relative differences between experimental data and various stopping models (this model, SRIM2013, DPASS)
2021· 1 citedOpen Access
Heavy-ion induced single event effects and latent damages in SiC power MOSFETs
Microelectronics Reliability·2021· 65 citedOpen Access
Radioluminescence Response of Ce-, Cu-, and Gd-Doped Silica Glasses for Dosimetry of Pulsed Electron Beams
Sensors·2021· 11 citedOpen Access
High-energy hadron testing and in-orbit single-event latchup predictions and boundaries
2021
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Frequent Co-authors

A. Virtanen(23), H. Kettunen(16), K.F. Galloway(12), Ronald D. Schrimpf(12), Rubén García Alía(10), Jean‐Marie Lauenstein(10), Alexandre Bosser(10), Véronique Ferlet-Cavrois(10), Robert A. Reed(9), Frédéric Saigné(9), Mikko Rossi(8), Jukka Jaatinen(8), H. Puchner(8), Arthur F. Witulski(8), Andrew L. Sternberg(8), F. Wrobel(8), Dennis R. Ball(7), Francesco Pintacuda(6), C. Martinella(6), Ulrike Großner(6)