Dian Lei

University College London — United Kingdom

Engineering · Physical Sciences

16h-index953citations50works0.02yr avg
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Research Topics

Photonic and Optical Devices(40), Nanowire Synthesis and Applications(15), Semiconductor materials and devices(14), Advanced Photonic Communication Systems(10), Advancements in Semiconductor Devices and Circuit Design(9)

Publications50 total

Multibeam Lasing Action from Bound States in the Continuum of Photonic Crystal Slab Waveguides
2024
Confined and propagating optical phonons in double-channel AlGaN/GaN heterostructures
Superlattices and Microstructures·2021· 3 cited
(Invited) Germanium-Tin Based Nano-Electronic and Photonic Devices
ECS Meeting Abstracts·2020· 1 cited
Ge and GeSn-based Nano-electronic Devices and Photo Detectors
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials·2020
Ge and GeSn-based Nano-electronic and Photonic Devices
2020
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
Optics Express·2019· 37 citedOpen Access
Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform
2019
Toward Monolithic Optoelectronic Integration of GeSn Photodiode and FinFET on GeSnOI Platform
2019· 2 cited
High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
2019· 3 cited
Formation of GeSn Multiple-Quantum-Well Microdisks on Insulating Platform Toward Lasing Applications
Conference on Lasers and Electro-Optics·2019
The First GeSn Gate-All-Around Nanowire P-FET on the GeSnOI Substrate with Channel Length of 20 nm and Subthreshold Swing of 74 mV/decade
2019· 7 cited
Highly Scaled Strained Silicon-On-Insulator Technology for the 5G Era: Impact of Geometry and Annealing on Strain Retention and Device Performance of nMOSFETs
IEEE Transactions on Electron Devices·2019· 5 cited
Theoretical investigation of metal/n-Ge1−<i>x</i>Sn<i>x</i> (0 ≤ <i>x </i>&amp;lt; 0.11) contacts using transfer matrix method
Journal of Applied Physics·2019· 3 cited
High Thermal Performance Ga<sub>2</sub>O<sub>3</sub> on Insulator Field-Effect Transistors
2019 Electron Devices Technology and Manufacturing Conference (EDTM)·2019· 1 cited
Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 °C to 300 °C
Applied Physics Express·2019· 12 cited
Formation of GeSn Multiple-Quantum-Well Microdisks on Insulating Platform toward Lasing Applications
Conference on Lasers and Electro-Optics·2019
High Performance Ga<sub>2</sub>O<sub>3</sub> Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
IEEE Journal of the Electron Devices Society·2019· 27 citedOpen Access
Sub-&lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$10^{-\textsf{9}}\,\,\Omega\cdot{\text{cm}}^{\textsf{2}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt; Specific Contact Resistivity (Down to &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$\textsf{4.4}\times\textsf{10}^{-\textsf{10}}\,\,\Omega\cdot\textsf{cm}^{\textsf{2}}$ &lt;/tex-math&gt; &lt;/inline-formula&gt;) for Metal Contact on Ga and Sn Surface-Segregated GeSn Film
IEEE Transactions on Electron Devices·2018· 16 cited
Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate
IEEE Transactions on Electron Devices·2018· 36 cited
Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
InTech eBooks·2018Open Access
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Frequent Co-authors

Xiao Gong(40), Yee‐Chia Yeo(33), Wei Wang(22), Yuan Dong(21), Shengqiang Xu(19), Ying Wu(18), Saeid Masudy‐Panah(15), Yi‐Chiau Huang(14), Kaizhen Han(13), Kwang Hong Lee(12), Chuan Seng Tan(12), Gengchiau Liang(11), Yuye Kang(11), Soon-Fatt Yoon(10), Qian Zhou(6), Wan Khai Loke(6), Shuh Ying Lee(5), Shuyu Bao(5), Sachin Yadav(5), Annie Kumar(5)