Shengqiang Xu

Engineering · Physical Sciences

16h-index871citations44works2.02yr avg
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Research Topics

Photonic and Optical Devices(36), Advanced Photonic Communication Systems(19), Optical Network Technologies(7), Thin-Film Transistor Technologies(7), Semiconductor materials and devices(6)

Publications44 total

Optoelectronically Active GaAs/GeSn-MQW/Ge Heterojunctions Created via Semiconductor Grafting
arXiv (Cornell University)·2025Open Access
GaAs/GeSn/Ge <i>n–i–p</i> diodes and light emitting diodes formed via grafting
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2024· 4 cited
A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface
ACS Nano·2023· 35 citedOpen Access
Strong Purcell effect in deep subwavelength coaxial cavity with GeSn active medium
Optics Letters·2021· 1 cited
Ge<sub>0.95</sub>Sn<sub>0.05</sub> Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width
Nano Letters·2021· 36 cited
High-Performance Back-Illuminated Ge<sub>0.92</sub>Sn<sub>0.08</sub>/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection
IEEE Journal of Selected Topics in Quantum Electronics·2021· 21 citedOpen Access
Germanium–tin (Ge <sub> 1– <i>x</i> </sub> Sn <sub> <i>x</i> </sub> ) photodetectors for 2  <i>μ</i> m wavelength band
Japanese Journal of Applied Physics·2021· 7 cited
(Invited) Germanium-Tin Based Nano-Electronic and Photonic Devices
ECS Meeting Abstracts·2020· 1 cited
High Field Temperature-Independent Field-Effect Mobility of Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors: Understanding the Importance of Equivalent-Oxide-Thickness Downscaling
IEEE Transactions on Electron Devices·2020· 18 cited
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate
Optics Express·2020· 44 citedOpen Access
Ge and GeSn-based Nano-electronic Devices and Photo Detectors
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials·2020
Ge and GeSn-based Nano-electronic and Photonic Devices
2020
Low Subthreshold Swing and High Mobility Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistor With Thin HfO<sub>2</sub> Gate Dielectric and Excellent Uniformity
IEEE Electron Device Letters·2020· 87 citedOpen Access
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm
Optics Express·2020· 102 citedOpen Access
High-efficiency photo detection at 2 µm realized by GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructure
Conference on Lasers and Electro-Optics·2020
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
Optics Express·2019· 37 citedOpen Access
First Demonstration of Complementary FinFETs and Tunneling FinFETs Co-Integrated on a 200 mm GeSnOI Substrate: A Pathway towards Future Hybrid Nano-electronics Systems
2019· 13 cited
High Performance GeSn Photodiode on a 200 mm Ge-on-insulator Photonics Platform for Advanced Optoelectronic Integration with Ge CMOS Operating at 2 μm Band
2019· 3 cited
Formation of GeSn Multiple-Quantum-Well Microdisks on Insulating Platform Toward Lasing Applications
Conference on Lasers and Electro-Optics·2019
Enhanced Photo Response at Two-Micron-Wavelength Using GeSn/Ge Multiple-Quantum-Well Waveguide
Conference on Lasers and Electro-Optics·2019· 1 cited
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Frequent Co-authors

Xiao Gong(38), Yi‐Chiau Huang(23), Yee‐Chia Yeo(20), Dian Lei(19), Yuan Dong(16), Saeid Masudy‐Panah(15), Chuan Seng Tan(15), Wei Wang(14), Kaizhen Han(14), Ying Wu(14), Kwang Hong Lee(13), Yuye Kang(12), Hong Wang(8), Annie Kumar(7), Xin Guo(6), Hao Zhou(5), Sachin Yadav(4), Eugene Y.-J. Kong(4), Bongkwon Son(3), Qimiao Chen(3)