Teng Ma

Xi'an University of Science and Technology — China

Engineering · Physical Sciences

13h-index521citations65works4.62yr avg
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Research Topics

Semiconductor materials and devices(21), Radiation Effects in Electronics(20), Advancements in Semiconductor Devices and Circuit Design(10), Ga2O3 and related materials(8), Integrated Circuits and Semiconductor Failure Analysis(8)

Publications65 total

Evaluation of atmospheric-neutron-induced failure rates in sic power diodes via spallation neutron irradiation
IET conference proceedings.·2025
State Space Model with dynamic frequency cue for infrared small target detection
Infrared Physics & Technology·2025
Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Schottky Barrier Diode
IEEE Transactions on Electron Devices·2025
Influence of 300 MeV High-Energy Proton Irradiation on β-Ga <sub>2</sub> O <sub>3</sub> Solar-Blind Ultraviolet Photodetector
IEEE Transactions on Electron Devices·2025
Mechanism of Heavy Ion-Induced Leakage Current Increase in Normally-OFF p-GaN Gate HEMTs
IEEE Transactions on Electron Devices·2025· 1 cited
Comparison of 14-MeV Neutron-Induced Damage in Si and SiC Power MOSFETs
IEEE Transactions on Electron Devices·2025
Total Ionizing Dose Effects on Lifetime of NMOSFETs Due to Hot Carrier-Induced Stress
Electronics·2025· 1 citedOpen Access
Behaviour of CFRP-steel tube dually confined compound concrete columns under cyclic axial compression
Structures·2025Open Access
Radiation Effects of 500 MeV Kr+ Ions on NiO/β-Ga₂O₃ Heterojunction Diodes
IEEE Transactions on Nuclear Science·2025· 1 cited
An Wavelet Steered network for efficient infrared small target detection
Infrared Physics & Technology·2025· 7 cited
Bias and LET Dependence of Heavy Ion Induced Degradation in SiC MOSFETs
2025
Study of Laser-Induced Single Event Effects in SiC Power MOSFETs
IEEE Transactions on Electron Devices·2025· 1 cited
Preparation of PA6-PVA composite fiber membrane based on coaxial spinning method and wettability study
Applied Physics A·2025· 3 cited
Heavy Ion-Induced Permanent Damage in Cascode Power GaN HEMTs
IEEE Transactions on Nuclear Science·2025· 1 cited
A Lightweight Feature Enhancement Model for Infrared Small Target Detection
IEEE Sensors Journal·2025· 12 cited
A study on the radiation effects on flexible GaInP/GaAs/InGaAs triple-junction solar cells using photoluminescence measurements
Physica Scripta·2025· 1 cited
Temperature Sensitivity of Vertical Ga₂O₃ Junction Barrier Schottky Diode Using the p-NiO/n-Ga₂O₃ Heterojunction
IEEE Sensors Journal·2025· 5 cited
Total Ionizing Dose Responses of β-Ga₂O₃ Thin Film Solar-Blind Ultraviolet Photodetectors
IEEE Transactions on Electron Devices·2025· 5 cited
Intelligent Visual Monitoring Terminal for Low-Altitude UAV Detection
Lecture notes in electrical engineering·2025
Total Ionizing Dose Effects of <i>β</i>-Ga₂O₃ Schottky Barrier Diode on Different Bias Conditions
IEEE Transactions on Electron Devices·2024· 5 cited
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Frequent Co-authors

Zhifeng Lei(13), Chao Peng(12), Zhangang Zhang(12), Hong Zhang(8), A. Paccagnella(6), Xue‐Feng Yu(6), Qi Guo(6), Jintao Zhu(5), Stefano Bonaldo(5), S. Mattiazzo(5), Simone Gerardin(5), Qiwen Zheng(5), Jiangwei Cui(5), Yiqiang Chen(5), Zhong’an Li(4), A. Basçhirotto(4), Christian Enz(4), Dandan Su(4), Hongjia Song(4), Yujuan He(4)