Peter W. Deelman

Physics and Astronomy · Physical Sciences

16h-index1.5kcitations57works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(29), Semiconductor materials and devices(21), Quantum and electron transport phenomena(13), Semiconductor materials and interfaces(10), Advancements in Semiconductor Devices and Circuit Design(9)

Publications57 total

Triple-Quantum-Dots with Overlapping Gates for Si/SiGe Qubits
Bulletin of the American Physical Society·2018
Atom Probe Tomography: Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography (Adv. Mater. Interfaces 21/2017)
Advanced Materials Interfaces·2017Open Access
Accurate Quantification of Si/SiGe Interface Profiles via Atom Probe Tomography
Advanced Materials Interfaces·2017· 46 citedOpen Access
High-resolution x-ray reflection Fourier analysis of metamorphic Si/SiGe quantum wells
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2017· 3 cited
Growth Rate and Temperature Dependence of Oxygen Incorporation in Si<sub>1-X</sub>Ge<sub>x</sub> Thin Films
ECS Meeting Abstracts·2016
Growth Rate and Temperature Dependence of Oxygen Incorporation in Si<sub>1-X</sub>Ge<sub>x</sub> Thin Films
ECS Transactions·2016
Quantification of Atomic Arrangements at Heterostructure Interfaces
Microscopy and Microanalysis·2016· 1 citedOpen Access
Metamorphic materials for quantum computing
MRS Bulletin·2016· 18 cited
Quantifying Atomic Arrangements of Si/SiGe Heterostructure Interfaces
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2016
Undoped accumulation-mode Si/SiGe quantum dots
Nanotechnology·2015· 2 citedOpen Access
Isotopically enhanced triple-quantum-dot qubit
Science Advances·2015· 234 citedOpen Access
Charge Relaxation in a Single-Electron<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>Si</mml:mi><mml:mo>/</mml:mo><mml:mi>SiGe</mml:mi></mml:math>Double Quantum Dot
Physical Review Letters·2013· 83 citedOpen Access
(Invited) Coherent Manipulation of a Si/SiGe-based Singlet-Triplet Qubit
ECS Transactions·2013
Measurements of undoped accumulation-mode SiGe quantum dot devices
Bulletin of the American Physical Society·2012
Coherent Singlet-Triplet Oscillations in a Silicon-based Double Quantum Dot
RePEc: Research Papers in Economics·2012
Coherent singlet-triplet oscillations in a silicon-based double quantum dot
Nature·2012· 522 cited
A PHYSICS-BASED TUNNELING MODEL FOR SB-HETEROSTRUCTURE BACKWARD TUNNEL DIODE MILLIMETER-WAVE DETECTORS
International Journal of High Speed Electronics and Systems·2011· 2 cited
Sub-Micron Area Heterojunction Backward Diode Millimeter-Wave Detectors With 0.18 ${\rm pW/Hz}^{1/2}$ Noise Equivalent Power
IEEE Microwave and Wireless Components Letters·2011· 90 cited
Measurement of the Spin Relaxation Lifetime (T$_{1}$) in a One-Electron Strained-Si Accumulation-Mode Quantum Dot
Bulletin of the American Physical Society·2011
Undoped Heterostructure Materials for SiGe Quantum Devices
Bulletin of the American Physical Society·2011
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Frequent Co-authors

A. T. Hunter(9), R. Rajavel(9), Mark F. Gyure(8), Clayton Jackson(8), D. H. Chow(8), Richard S. Ross(7), Patrick Fay(7), L. F. Edge(7), L. J. Schowalter(7), Matthew Borselli(6), I. Milosavljevic(6), J. N. Schulman(6), S. Thomas(6), Thomas Thundat(6), K.S. Holabird(5), Andrey A. Kiselev(5), Adele Schmitz(5), Y.K. Boegeman(5), M. Sokolich(4), Thomas Hazard(4)