I. Milosavljevic

HRL Laboratories (United States) — United States

Physics and Astronomy · Physical Sciences

19h-index1.8kcitations46works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(25), Radio Frequency Integrated Circuit Design(22), Semiconductor Quantum Structures and Devices(13), Ga2O3 and related materials(11), Advancements in Semiconductor Devices and Circuit Design(8)

Publications46 total

Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications
2023· 8 cited
W-band fully passivated AlN/GaN HEMT device with 56% power-added efficiency and 780 mW/mm output power density at 94 GHz
2023· 6 cited
Preliminary Design of a Long Range, Fuel Efficient High Performance Business Jet
AIAA Scitech 2019 Forum·2019· 1 cited
Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation
Physical Review Letters·2016· 288 citedOpen Access
Undoped accumulation-mode Si/SiGe quantum dots
Nanotechnology·2015· 2 citedOpen Access
Isotopically enhanced triple-quantum-dot qubit
Science Advances·2015· 234 citedOpen Access
The Economic Wireworms of the Pacific Northwest
2014
X band highly efficient GaN power amplifier utilizing built-in electroformed heat sinks for advanced thermal management
2013· 11 cited
Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends
2012· 8 cited
70–105 GHz wideband GaN power amplifiers
European Microwave Integrated Circuit Conference·2012· 18 cited
92–96 GHz GaN power amplifiers
2012· 95 cited
Ultra-low resistance ohmic contacts in graphene field effect transistors
Applied Physics Letters·2012· 141 cited
Measurements of undoped accumulation-mode SiGe quantum dot devices
Bulletin of the American Physical Society·2012
Graphene review: An emerging RF technology
2012· 7 cited
Graphene transistors for RF applications: Opportunities and challenges
2011· 3 cited
W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE
2011· 71 cited
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
IEEE Electron Device Letters·2011· 83 cited
High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators
IEEE Electron Device Letters·2011· 38 cited
Device scaling technologies for ultra-high-speed GaN-HEMTs
2011· 6 cited
Measurement of the Spin Relaxation Lifetime (T$_{1}$) in a One-Electron Strained-Si Accumulation-Mode Quantum Dot
Bulletin of the American Physical Society·2011
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Frequent Co-authors

M. Micovic(23), A. Schmitz(21), P. J. Willadsen(21), P. Hashimoto(17), K. Shinohara(14), C. Butler(14), David F. Brown(12), D. H. Chow(12), M. Antcliffe(11), Ming Hu(11), A. Kurdoghlian(11), Shawn D. Burnham(11), A. Corrion(11), Richard S. Ross(8), Mark F. Gyure(8), A. T. Hunter(8), Meredith Wetzel(8), D. Regan(8), Matthew Borselli(7), Peter W. Deelman(7)