P. J. Willadsen

HRL Laboratories (United States) — United States

Physics and Astronomy · Physical Sciences

19h-index1.2kcitations30works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(30), Radio Frequency Integrated Circuit Design(23), Ga2O3 and related materials(11), Semiconductor Quantum Structures and Devices(8), Advanced Power Amplifier Design(7)

Publications30 total

Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends
2012· 8 cited
70–105 GHz wideband GaN power amplifiers
European Microwave Integrated Circuit Conference·2012· 18 cited
92–96 GHz GaN power amplifiers
2012· 95 cited
High efficiency X-band class-E GaN MMIC high-power amplifiers
2012· 25 cited
Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency
2011· 95 cited
W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE
2011· 71 cited
Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz
IEEE Electron Device Letters·2011· 83 cited
Reliability of T‐gate AlGaN/GaN HEMTs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 14 cited
High-Speed AlN/GaN MOS-HFETs With Scaled ALD $ \hbox{Al}_{2}\hbox{O}_{3}$ Gate Insulators
IEEE Electron Device Letters·2011· 38 cited
Device scaling technologies for ultra-high-speed GaN-HEMTs
2011· 6 cited
Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth
IEEE Transactions on Electron Devices·2011· 32 cited
Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs
IEEE Electron Device Letters·2011· 23 cited
High-Speed AlN/GaN MOS-HFETs With Scaled ALD Al 2 O 3 Gate Insulators
2011· 3 cited
220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic
2010· 55 cited
Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mm $g_{m}$ and 112-GHz $f_{T}$
IEEE Electron Device Letters·2010· 56 cited
Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE
2010· 24 cited
W-band GaN MMIC with 842 mW output power at 88 GHz
2010 IEEE MTT-S International Microwave Symposium·2010· 16 cited
W-Band GaN MMIC with 842 mW output power at 88 GHz
2010 IEEE MTT-S International Microwave Symposium·2010· 73 cited
60-nm GaN/AlGaN DH-HEMTs with 1.0 Ω·mm R<inf>on</inf>, 2.0 A/mm I<inf>dmax</inf>, and 153 GHz f<inf>T</inf>
2009· 5 cited
Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium·2008· 15 cited
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Frequent Co-authors

M. Micovic(30), P. Hashimoto(24), I. Milosavljevic(21), A. Schmitz(17), Ming Hu(16), K. Shinohara(15), Shawn D. Burnham(14), C. Butler(14), A. Kurdoghlian(13), D. H. Chow(13), David F. Brown(12), A. Corrion(11), D. Regan(9), M. Antcliffe(9), Wei-Ting Wong(9), Meredith Wetzel(9), R. Bowen(7), D. Wong(7), Robert Grabar(5), H. P. Moyer(5)