D. Wong

University of Calgary — Canada

Engineering · Physical Sciences

22h-index2.6kcitations100works0.02yr avg
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Research Topics

Advanced Fiber Optic Sensors(31), GaN-based semiconductor devices and materials(25), Photonic and Optical Devices(25), Radio Frequency Integrated Circuit Design(21), Graphene research and applications(13)

Publications100 total

Design of an Arsine Gas Free Rapid Arsenic Detector Using a Novel Luminescent Metal-Organic Framework
ECS Meeting Abstracts·2020· 1 cited
Linear Distributed GaN MMIC Power Amplifier with Improved Power-added Efficiency
2017
High-Speed Graphene Field Effect Transistors on Microbial Cellulose Biomembrane
IEEE Transactions on Nanotechnology·2017· 11 cited
100 MHz–8 GHz linear distributed GaN MMIC power amplifier with improved power-added efficiency
2017· 16 cited
>70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning
IEEE Electron Device Letters·2016· 45 cited
Wideband linear distributed GaN HEMT MMIC power amplifier with a record OIP3/Pdc
2016· 32 cited
Graphene and Lateral Heterostructure for THz Imaging
IEEE Transactions on Terahertz Science and Technology·2015· 6 cited
Silver Nanowire-Based Infrared-Transparent Contacts for Future High-Density Format Focal Plane Arrays
IEEE Transactions on Nanotechnology·2014· 14 cited
Graphene based active and passive component development on transparent substrates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 6 cited
20 Mb/s Zero-power graphene-on-glass microwave envelope detectors for ubiquitous ultra-low-power wireless network
2014· 9 cited
Critical gate module process enabling the implementation of a 50A/600V AlGaN/GaN MOS-HEMT
2012· 2 cited
High efficiency X-band class-E GaN MMIC high-power amplifiers
2012· 25 cited
Graphene review: An emerging RF technology
2012· 7 cited
Graphene transistors for RF applications: Opportunities and challenges
2011· 3 cited
Reliability of T‐gate AlGaN/GaN HEMTs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 14 cited
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
IEEE Electron Device Letters·2011· 348 cited
Sub-1-dB Noise Figure Performance of High-Power Field-Plated GaN HEMTs
IEEE Electron Device Letters·2011· 23 cited
Hypermethylation of tumour suppressor genes in ocular adnexal lymphoma
Acta Ophthalmologica·2010
Self-aligned graphene-on-SiC and graphene-on-Si MOSFETs on 75 mm wafers
2010· 3 cited
Vertically scaled GaN/AlN DH-HEMTs with regrown n+GaN ohmic contacts by MBE
2010· 24 cited
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Frequent Co-authors

Ming Hu(13), M. Micovic(13), J. S. Moon(12), P. Hashimoto(11), Simon Fleming(10), Wei Xu(8), Jeong‐Sun Moon(8), C. McGuire(7), M. Antcliffe(5), T. Hussain(5), P. J. Willadsen(5), Shawn D. Burnham(4), D. H. Chow(4), Kin Seng Chiang(4), Paul Blazkiewicz(4), Daniel J. Curtis(3), Glenn G. Jernigan(3), Brenda L. VanMil(3), Charles R. Eddy(3), D. Kurt Gaskill(3)