Menno J. Kappers

University of Cambridge — United Kingdom

Physics and Astronomy · Physical Sciences

49h-index8.2kcitations383works1.12yr avg
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Research Topics

GaN-based semiconductor devices and materials(323), Semiconductor materials and devices(157), Semiconductor Quantum Structures and Devices(115), Metal and Thin Film Mechanics(106), Ga2O3 and related materials(106)

Publications383 total

Controlled epitaxy of room-temperature quantum emitters in gallium nitride
arXiv (Cornell University)·2026Open Access
Controlled epitaxy of room-temperature quantum emitters in gallium nitride
APL Photonics·2026Open Access
Porous GaN: Anion-Specific Electrochemical Etching Mechanisms and Morphological Control
ACS Applied Materials & Interfaces·2025Open Access
Effect of buffer layer thickness on recombination in zincblende InGaN/GaN quantum wells
Journal of Physics D Applied Physics·2025Open Access
Demonstration of a photoelectric tunable-step terahertz detector on the AlGaN/GaN material system
2025
Point defect luminescence associated with stacking faults in magnesium doped zincblende GaN
Journal of Applied Physics·2025· 1 citedOpen Access
Microwave plasma modelling for thick diamond deposition on III-nitrides
Carbon·2025· 2 citedOpen Access
Beyond transmission electron microscopy imaging: Atom probe tomography reveals chemical inhomogeneity at stacking fault interfaces in InGaN/GaN light-emitting diodes
Materialia·2025· 1 citedOpen Access
Broadly tunable cubic phase InGaN/GaN quantum wells grown by metal-organic chemical vapor deposition.
2025Open Access
Behaviour of Ti/Al/Ti/Au contacts to AlGaN/GaN heterostructures at low temperature
Journal of Physics D Applied Physics·2025Open Access
Microwave Plasma Modelling for Thick Diamond Deposition on Iii-Nitrides
SSRN Electronic Journal·2025Open Access
Recombination efficiency in c-plane (In,Ga)N/GaN quantum wells: saturation of localisation sites versus Auger–Meitner recombination
Journal of Physics D Applied Physics·2024· 1 citedOpen Access
Impact of stacking faults on the luminescence of a zincblende InGaN/GaN single quantum well
Journal of Physics D Applied Physics·2024· 2 citedOpen Access
Influence of Xe+ and Ga+ milling species on the cathodoluminescence of wurtzite and zincblende GaN
Journal of Applied Physics·2024· 2 citedOpen Access
Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates
Journal of Applied Physics·2024· 7 citedOpen Access
Cathodoluminescence studies of the optical properties of a zincblende InGaN/GaN single quantum well
Nanotechnology·2024· 3 citedOpen Access
Atom Probe Tomography Investigation of the Impact of Stacking Faults on InGaN/GaN Quantum Well LED Systems
Microscopy and Microanalysis·2024
Room temperature quantum emitters in aluminum nitride epilayers on silicon
Applied Physics Letters·2024· 1 citedOpen Access
Threshold voltage mapping at the nanoscale of GaN-based high electron mobility transistor structures using hyperspectral scanning capacitance microscopy
Applied Physics Letters·2024Open Access
Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons
Microscopy and Microanalysis·2024· 5 citedOpen Access
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Frequent Co-authors

C. J. Humphreys(43), Rachel A. Oliver(28), P. Dawson(11), J. S. Barnard(9), Fabien Massabuau(8), M. E. Vickers(7), Robert A. Taylor(6), M. A. Moram(6), E. J. Thrush(5), Ranjan Datta(5), C. McAleese(5), S.‐L. Sahonta(5), T. M. Smeeton(4), M. J. Godfrey(4), James H. Rice(4), Anas F. Jarjour(4), M. J. Galtrey(3), G. Andrew D. Briggs(3), Sneha Rhode(3), David W. Saxey(3)