M. A. Moram

Imperial College London — United Kingdom

Physics and Astronomy · Physical Sciences

31h-index4.1kcitations101works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(80), Metal and Thin Film Mechanics(51), Semiconductor materials and devices(37), ZnO doping and properties(27), Ga2O3 and related materials(21)

Publications101 total

About 335 nm Ultraviolet Emissions Obtained from Simple Metal–Insulator–Semiconductor Light‐Emitting Tunnel Diodes
physica status solidi (a)·2020· 2 cited
Optical and structural properties of dislocations in InGaN
Journal of Applied Physics·2019· 14 citedOpen Access
Exploring the Effects of Order vs. Disorder using Three Cations: the example of Al-Mg-Si-N
Bulletin of the American Physical Society·2018
Native Defects and Impurities in the Wide Band Gap II-IV Nitride MgSiN 2
Bulletin of the American Physical Society·2018
Towards Two-Dimensional Oxides for Optoelectronic Applications
MRS Advances·2018· 1 cited
Structure and lattice dynamics of the wide band gap semiconductors MgSiN2 and MgGeN2
Journal of Applied Physics·2017· 24 citedOpen Access
Properties of GaN nanowires with Sc<sub><i>x</i></sub>Ga<sub>1<i>−x</i></sub>N insertion
physica status solidi (b)·2017· 1 cited
Ultraviolet Emission From Resonant Tunnelling Metal–Insulator– Semiconductor Light Emitting Tunnel Diodes
IEEE photonics journal·2017· 6 citedOpen Access
Alloy composition fluctuations and percolation in semiconductor alloy quantum wells
Applied Physics Letters·2017· 8 cited
Electron effective mass and mobility limits in degenerate perovskite stannate<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>BaSnO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>
Physical review. B./Physical review. B·2017· 59 citedOpen Access
Physical properties of the wide band gap II-IV nitride MgSiN$_{2}$
Bulletin of the American Physical Society·2017
Polaron coupling constants in BaSnO$_3$
arXiv (Cornell University)·2016· 1 citedOpen Access
Electronic structure of the high and low pressure polymorphs of MgSiN<sub>2</sub>
Materials Research Express·2016· 17 citedOpen Access
Band gap bowing in NixMg1−xO
Scientific Reports·2016· 56 citedOpen Access
Valence band offsets of Sc<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/AlN and Sc<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/GaN heterojunctions
Journal of Physics D Applied Physics·2016· 10 cited
Composition measurement of epitaxial Sc<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N films
Semiconductor Science and Technology·2016· 7 citedOpen Access
Corrigendum to “Carbon nanotube (CNT) forest on diamond-like carbon (DLC) electrode improves electrochemical sensitivity towards dopamine by two orders of magnitude” [Sens. Actuators B 211 (2015) 177–186]
Sensors and Actuators B Chemical·2016
Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen
Applied Physics Letters·2016· 36 cited
Dislocation core structures in (0001) InGaN
Journal of Applied Physics·2016· 20 cited
Sc x Ga 1-x N/AlNとSc x Ga 1-x N/GaNヘテロ接合の価電子帯オフセット
Journal of Physics D Applied Physics·2016· 5 cited
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Frequent Co-authors

C. J. Humphreys(34), Menno J. Kappers(22), Sneha Rhode(10), Z. H. Barber(6), Carol Johnston(5), Matthew K. Horton(5), Rajiv O. Dusane(5), S.‐L. Sahonta(5), T.B. Joyce(5), Tomi Laurila(4), M. J. Kappers(4), Mikael Råsander(4), Rachel A. Oliver(4), Paul R. Chalker(4), M. E. Vickers(3), Sen Zhang(3), Wai Yuen Fu(3), J. L. Hollander(3), Yuchen Zhang(3), Timothy J. Pennycook(3)