Oupeng Li

Huawei Technologies (China) — China

Engineering · Physical Sciences

9h-index372citations36works1.52yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(20), Microwave Engineering and Waveguides(15), Semiconductor Quantum Structures and Devices(6), Microwave and Dielectric Measurement Techniques(6), Millimeter-Wave Propagation and Modeling(5)

Publications36 total

Terahertz integrated sensing and mobile communications empowered by a 220-GHz-band portable device
Nature Communications·2025Open Access
Theoretical Analysis of Load Sensitivity of Doherty Power Amplifier
2025
Broadband Symmetric Doherty Power Amplifier with Extended OBO Based on Hybrid CCL-OCC Network
2025
A 200-GHz Phased-Array Wireless Communication System Using HTCC System-in-Package Technology
IEEE Transactions on Terahertz Science and Technology·2024· 6 cited
A 200-GHz Four-Element Phased-Array Receiver System-in-Package Using HTCC Technology for Sub-Terahertz Communications
IEEE Transactions on Microwave Theory and Techniques·2023· 17 cited
Comprehensive Prototype Demonstration of Ultra-Broadband Terahertz Platform for 6G ISAC
2023· 7 cited
A Co-hardware and Co-waveform THz Integrated Sensing and Communication System for High-rate Communication and Millimeter-level Imaging
2023· 1 cited
Integrated sensing and communication in 6G: a prototype of high resolution multichannel THz sensing on portable device
EURASIP Journal on Wireless Communications and Networking·2022· 21 citedOpen Access
High-Integration and Low-Cost Transmitter Packaging Solution for 0.2 THz SiP Application Using HTCC Technology
IEEE Microwave and Wireless Components Letters·2022· 25 cited
Integrated Sensing and Communication in 6G A Prototype of High Resolution THz Sensing on Portable Device
2021· 67 cited
A 220-GHz InP DHBT Power Amplifier With Integrated Planar Spatial Power Combiner
IEEE Microwave and Wireless Components Letters·2019· 9 cited
Measurement and Modeling Techniques for InP-Based HBT Devices to 220GHz
2018· 2 cited
Key technologies of solid state devices on terahertz
2017
A High-Frequency Compact Model for Graphene Resonant Channel Transistors Including Mechanical Nonlinear Effects
IEEE Transactions on Microwave Theory and Techniques·2017· 1 cited
A Thru-Halfthru-Short De-Embedding Method for Millimeter-Wave On-Wafer HBT Characterization
IEEE Electron Device Letters·2017· 19 cited
Parasitic Parameters Extraction for InP DHBT Based on EM Method and Validation up to H-Band
Journal of Infrared Millimeter and Terahertz Waves·2017· 11 cited
140 GHz power amplifier based on 0.5 µm composite collector InP DHBT
IEICE Electronics Express·2017· 5 citedOpen Access
A D-band divide-by-6 injection-locked frequency divider with Lange-coupler feedback architecture in 0.13 µm SiGe HBT
IEICE Electronics Express·2017· 1 citedOpen Access
225–255-GHz InP DHBT Frequency Tripler MMIC Using Complementary Split-Ring Resonator
Journal of Infrared Millimeter and Terahertz Waves·2016· 8 cited
Measurement and modeling techniques for InP-based HBT devices to 220GHz
2016· 4 cited
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Frequent Co-authors

Ruimin Xu(17), Wei Cheng(14), Haiyan Lu(12), Guangjian Wang(9), Yuehang Xu(6), Lei Wang(6), Xianfeng Du(5), Ruimin Xu(5), Yong Zhang(5), Qiao Liu(5), Hua Cai(4), Yuan Wang(4), Yan Sun(4), Xiao Li(3), Yong Zhang(3), Yunchuan Guo(3), Guanhai Li(2), Xiaohong Chen(2), Yuan Jiang(2), Lujun Huang(2)