Ruimin Xu

University of Electronic Science and Technology of China — China

Engineering · Physical Sciences

26h-index2.9kcitations233works2.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(102), GaN-based semiconductor devices and materials(73), Microwave Engineering and Waveguides(62), Silicon Carbide Semiconductor Technologies(36), Semiconductor Quantum Structures and Devices(33)

Publications233 total

Physics-Based Nonlinear Capacitance Model Considering Velocity Saturation Effect
IEEE Transactions on Electron Devices·2025· 1 cited
Defocus and speckle noise suppression in optical scanning holography
Optics & Laser Technology·2025
A Low-Loss Sub-THz Radial Power Divider Based on Circularly Polarized TE<sub>11</sub> Mode
IEEE Transactions on Terahertz Science and Technology·2025· 1 cited
A 2–15 GHz 6-bit CMOS True Time Delay Chip With High Area Efficiency and Reduced Insertion Loss Variation
IEEE Transactions on Microwave Theory and Techniques·2025· 2 cited
A Novel Circularly Polarized TE<sub>21</sub> Mode Converter for Radial Power Combination Applications
2024· 1 cited
A 200-GHz Phased-Array Wireless Communication System Using HTCC System-in-Package Technology
IEEE Transactions on Terahertz Science and Technology·2024· 6 cited
Near-Field Radiation of Millimeter Wave Power Amplifier
2024
A Broadband 220-GHz Converter From Rectangular Waveguide TE<sub>10</sub> Mode to SIW TE<sub>20</sub> Mode for Terahertz Planar Integration
IEEE Transactions on Microwave Theory and Techniques·2024· 7 cited
Design of Ultra-Compact True Time Delay Unit Based on 8-Shape Transformer
2024
Hydrogen-Terminated Diamond Field-Effect Transistors With 10<sup>11</sup> ON/ OFF Ratio Using an Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Stacked Passivation Layer
IEEE Transactions on Electron Devices·2023· 5 cited
Degradation Mechanisms of Hydrogen-Terminated Diamond MISFETs Under Off-State Stress Conditions
IEEE Transactions on Electron Devices·2023· 1 cited
Suppression of Short Channel Effects in Hydrogen- Terminated Diamond MISFETs Using an Al<sub>2</sub> O<sub>3</sub> / HfO<sub>2</sub> Stacked Passivation Layer
2023
A 2.6-GHz-Band High Power GaN Doherty Power Amplifier Based on GaAs Integrated Passive Devices
2023· 2 cited
Study of Degradation Mechanisms in Hydrogen-Terminated Diamond MOSFETs Under Off-State and Semi-on-State Conditions
2023
Orientation Polarization Effect in Al<sub>2</sub>O<sub>3</sub>/Hydrogen-Terminated Diamond MISFETs
IEEE Transactions on Electron Devices·2023· 1 cited
Influence of a new motion correction algorithm (CardioCapture) on the correlation between heart rate and optimal reconstruction phase
Heliyon·2023· 4 citedOpen Access
Oxidized-Silicon-Terminated Diamond p-FETs With SiO<sub>2</sub>-Filling Shallow Trench Isolation Structures
IEEE Electron Device Letters·2023· 9 cited
Spoof Surface Plasmon Polaritons for High-Efficiency Terahertz Power Combiner
IEEE Transactions on Microwave Theory and Techniques·2023· 12 cited
A novel large‐signal GaN HEMT modeling based on harmonic mean
Microwave and Optical Technology Letters·2023
Compact and Low-Crosstalk Terahertz On-Chip Spoof Surface Plasmon Polaritons Based on InP Technology
IEEE Transactions on Plasma Science·2023· 4 cited
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Frequent Co-authors

Yuehang Xu(29), Yong Zhang(12), Tangsheng Chen(9), Changsi Wang(6), Zhang Wen(6), Yongbo Chen(6), Bo Yan(6), Longfang Ye(5), Yukun Li(5), Chunjiang Ren(5), Yunqiu Wu(5), Qingzhi Wu(5), Huali Zhu(4), Xuming Yu(4), Haiyan Lu(4), Tao Gao(4), Xiaodong Zhao(4), Yuechan Kong(4), Yu Fu(4), Bo Yan(4)