Zhang Wen

Physics and Astronomy · Physical Sciences

12h-index566citations65works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(21), Radio Frequency Integrated Circuit Design(19), Silicon Carbide Semiconductor Technologies(16), Antenna Design and Analysis(7), Microwave Engineering and Waveguides(7)

Publications65 total

Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate
Acta Physica Sinica·2022· 3 citedOpen Access
AD-Band Wideband E-Shaped Patch Loaded by Open Stubs for Antenna in Package (AiP) Application
2020 IEEE MTT-S International Wireless Symposium (IWS)·2020
A Wideband Nonlinear Behavioral Model for D-Band Power Amplifiers Including Memory Effects
2020 IEEE MTT-S International Wireless Symposium (IWS)·2020· 2 cited
A NOVEL DUAL BAND-NOTCHED CPW-FED UWB MIMO ANTENNA WITH MUTUAL COUPLING REDUCTION CHARACTERISTICS
Progress In Electromagnetics Research Letters·2020· 10 citedOpen Access
A Quasi-Physical Large-Signal Statistical Model for 0.15 μm AlGaN/GaN HEMTs Process
2019· 10 cited
An Angelov Large-Signal FET Model Up To 67 GHz
IEEE Transactions on Electron Devices·2019· 13 cited
Design of W band hairpin filter with IPD technology
2019 IEEE MTT-S International Wireless Symposium (IWS)·2019· 9 cited
A Quasi-Physical Compact Large-Signal Model for 70 nm Process GaAs HEMTs
2019 IEEE MTT-S International Wireless Symposium (IWS)·2019· 2 cited
A Large-Signal Model for Two-Dimensional Hole Gas Diamond MOSFET Based on the QPZD
IEEE Access·2019· 12 citedOpen Access
Tunable magnetic orders in UAu <sub> 1– <i>x</i> </sub> Sb <sub>2</sub>
Chinese Physics B·2019
A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
IEEE Access·2019· 8 citedOpen Access
A reliable and efficient small‐signal parameter extraction method for GaN HEMTs
International Journal of Numerical Modelling Electronic Networks Devices and Fields·2018· 26 cited
Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices·2018· 29 cited
Characterization and Modeling of a SiC MOSFET's Turn-On Overvoltage
2018· 17 cited
Characterization of Buffer-Related Current Collapse by Buffer Potential Simulation in AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices·2018· 41 cited
Superconductivity of bilayer titanium/indium thin film grown on SiO <sub>2</sub> /Si (001)
Chinese Physics B·2018· 3 cited
Physical properties and field-induced metamagnetic transitions in UAu0.8Sb2
Scientific Reports·2018· 5 citedOpen Access
Large Signal Statistical Model Oriented Parameter Extraction Method for GaN High Electron Mobility Transistors
Chinese Journal of Electronics·2017· 2 citedOpen Access
A Quasi-Physical Compact Large-Signal Model for AlGaN/GaN HEMTs
IEEE Transactions on Microwave Theory and Techniques·2017· 68 cited
Simulation study of training sequence performance of CE-OFDM system based on multipath channel
2017
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Frequent Co-authors

Yuehang Xu(19), Ruimin Xu(15), Changsi Wang(7), Yonghao Jia(6), Zhikai Chen(6), Huabing Zhu(5), Haikun Yue(5), Yang Tang(5), Yunqiu Wu(4), Xiaodong Zhao(4), Boshen Chen(4), Tangsheng Chen(3), Yongbo Chen(3), Yong‐Xin Guo(3), Bo Yan(3), Shiyong Tan(3), Wei Feng(3), Xiegang Zhu(3), Xinchun Lai(3), Xianjin Deng(3)