Qingzhi Wu

University of Electronic Science and Technology of China — China

Physics and Astronomy · Physical Sciences

11h-index459citations26works2.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(14), Radio Frequency Integrated Circuit Design(13), Silicon Carbide Semiconductor Technologies(5), Semiconductor Quantum Structures and Devices(4), Microwave Engineering and Waveguides(4)

Publications26 total

A Knowledge-Based Transfer Learning Capacitance Model for GaN HEMTs
2025
0.03-2.5 GHz High Linearity 10 W GaN Power Amplifier
2024
Near-Field Radiation of Millimeter Wave Power Amplifier
2024
Physics‐based compact models of <scp>GaN HEMTs</scp> for high power <scp>RF</scp> applications: A review (Invited Paper)
International Journal of Numerical Modelling Electronic Networks Devices and Fields·2024· 9 cited
A 2.6-GHz-Band High Power GaN Doherty Power Amplifier Based on GaAs Integrated Passive Devices
2023· 2 cited
6–18-GHz High Harmonic Suppression GaN Power Amplifier MMIC for Integrated Electronic Warfare Systems
IEEE Microwave and Wireless Technology Letters·2023· 20 cited
A Ku-Band 40W GaN Power Amplifier MMIC for Satellite Communication
2022· 4 cited
Characterization and Modeling of Trapping Effects in GaAs Enhanced HEMT under High Input Dynamic Range
2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)·2022· 2 cited
A Broadband 20W GaN High Power Amplifier for Ku-band satellite communication
2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)·2022· 12 cited
Dual composite right/left‐handed unit with improved spurious performance and its application in wide‐stopband bandpass filter
Microwave and Optical Technology Letters·2022· 2 cited
Electro-Thermal Model for Schottky Barrier Diode Based on Self-Heating Effect
2021· 7 cited
A Compact Surface Potential Model for Flexible Radio Frequency AlGaN/GaN High-Electron-Mobility Transistor
IEEE Transactions on Microwave Theory and Techniques·2021· 14 cited
Bendable Microwave AlGaN/GaN High-Electron-Mobility Transistor With Output Power Density of 2.65 W/mm
IEEE Electron Device Letters·2021· 18 cited
Mode matching analysis of a novel transmission line with two centrosymmetric longitudinal slots
Journal of Electromagnetic Waves and Applications·2021
Novel planar quasi‐TEM transmission line with high isolation and its application to T‐junction power divider
IET Microwaves Antennas & Propagation·2020· 1 citedOpen Access
Microneedle Patches: Gelatin Methacryloyl Microneedle Patches for Minimally Invasive Extraction of Skin Interstitial Fluid (Small 16/2020)
Small·2020· 4 citedOpen Access
Gelatin Methacryloyl Microneedle Patches for Minimally Invasive Extraction of Skin Interstitial Fluid
Small·2020· 204 citedOpen Access
Broadband transition from a high‐isolation transmission line to microstrip line
Electronics Letters·2019· 2 citedOpen Access
Characterization and Modeling of Hydrogen-Terminated MOSFETs With Single-Crystal and Polycrystalline Diamond
IEEE Electron Device Letters·2018· 21 cited
A scalable and multibias parameter extraction method for a small‐signal GaN HEMT model
International Journal of Numerical Modelling Electronic Networks Devices and Fields·2018· 12 cited
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Frequent Co-authors

Yuehang Xu(15), Ruimin Xu(14), Bo Yan(7), Shuman Mao(7), Fangzhou Guo(4), Yan Wang(3), Yan Wang(3), Yuehang Xu(3), Huanpeng Wang(3), Jixiang Zhu(2), Xingwu Zhou(2), Han‐Jun Kim(2), Moyuan Qu(2), Xing Jiang(2), KangJu Lee(2), Li Ren(2), Canran Wang(2), Xunmin Zhu(2), Peyton Tebon(2), Shiming Zhang(2)