Kenji Tsubaki

Panasonic (Japan) — Japan

Physics and Astronomy · Physical Sciences

11h-index1.4kcitations29works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(23), Ga2O3 and related materials(20), Photocathodes and Microchannel Plates(7), Metal and Thin Film Mechanics(6), ZnO doping and properties(4)

Publications29 total

Over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer (Conference Presentation)
2017· 6 cited
Deep-ultraviolet light-emitting diodes with external quantum efficiency higher than 20% at 275 nm achieved by improving light-extraction efficiency
Applied Physics Express·2017· 545 cited
AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
Topics in applied physics·2017· 1 cited
Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer
IEICE Technical Report; IEICE Tech. Rep.·2016
Realization of over 10% EQE AlGaN deep-UV LED by using transparent p-AlGaN contact layer
2016· 6 cited
Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes
IEICE Technical Report; IEICE Tech. Rep.·2013
Development of highly-uniform 270-nm deep-ultraviolet light-emitting diodes
2013
Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2013· 7 cited
Characteristics of epitaxial lateral overgrowth AlN templates on (111)Si substrates for AlGaN deep‐UV LEDs fabricated on different direction stripe patterns
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 17 cited
Highly‐uniform 260 nm‐band AlGaN‐based deep‐ultraviolet light‐emitting diodes developed by 2‐inch×3 MOVPE system
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2011· 18 cited
Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system
IEICE Technical Report; IEICE Tech. Rep.·2011
Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates
IEICE technical report. Component parts and materials·2011
Realization of 256–278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates
Applied Physics Express·2011· 34 cited
Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy
Nanotechnology·2010· 107 cited
Development of the high quality AlN template on Si substrate
2010
222–282 nm AlGaN and InAlGaN‐based deep‐UV LEDs fabricated on high‐quality AlN on sapphire
physica status solidi (a)·2009· 419 cited
Milliwatt power 270 nm‐band AlGaN deep‐UV LEDs fabricated on ELO‐AlN templates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 29 cited
Fabrication of a low threading dislocation density ELO‐AlN template for application to deep‐UV LEDs
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 129 citedOpen Access
Realization of 270 nm band AlGaN based UV‐LEDs on large area AlN templates with high crystalline quality
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 2 citedOpen Access
222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 20 cited
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Frequent Co-authors

Takayoshi Takano(21), Hideki Hirayama(15), Norimichi Noguchi(9), Takuya Mino(7), Sachie Fujikawa(7), Norihiko Kamata(7), Hirayama Hideki(7), Jun Norimatsu(5), Mino Takuya(5), Takuya Komoda(4), Nobuyoshi Koshida(4), Jun Sakai(3), Masakazu Sugiyama(3), Noritoshi Maeda(2), Masafumi Jo(2), Issei Ohshima(2), Takuma Matsumoto(2), Sugiyama Masakazu(2), R. Armitage(1), Hiroshi Yamanaka(1)