Hideki Hirayama

Pioneer (United States) — United States

Physics and Astronomy · Physical Sciences

43h-index8.8kcitations446works4.12yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(308), Ga2O3 and related materials(194), Photocathodes and Microchannel Plates(102), Spectroscopy and Laser Applications(79), Semiconductor Quantum Structures and Devices(66)

Publications446 total

Synergistic TE-mode engineering and polarization control in 290 nm AlGaN UVB LEDs via Al-graded hole injection layer
Micro and Nanostructures·2025
Enhancing 229 nm far-UVC LED efficiency via simultaneous polarization engineering in n-AlGaN and p-AlGaN injection layers
Micro and Nanostructures·2025
Progress of AlGaN-based 230nm-band far-UVC LEDs and its applications
2025
Polarization Assisted n-AlGaN Electron Injection Layer in 229 nm far-UVC LEDs for Hole Blocking and Current Density Enhancement
2025
Simultaneous influence of nanoPSS and photonic crystal on light extraction in AlGaN 304nm UVB LEDs
Scientific Reports·2025· 5 citedOpen Access
Efficiency increase in 220–230nm far-UVC LEDs and 200mW class 230nm power LED module grown on c-sapphire substrate
2025· 1 cited
Reduction of the threshold current of deep-ultraviolet laser diodes with embedded quantum dots in quantum wells
New Journal of Physics·2025· 1 citedOpen Access
Detection and Estimation of Nonradiative Recombination Centers in Uv-C Algan Quantum Well by Below-Gap Excitation
SSRN Electronic Journal·2025Open Access
Effect of n-type AlGaN buffer layers Growth Temperature on relaxation and conductivity in 228-230nm Far-UVC LED grown on c-Sapphire
2024· 1 cited
Nitride Semiconductors
physica status solidi (b)·2024· 23 citedOpen Access
Nitride Semiconductors
physica status solidi (RRL) - Rapid Research Letters·2024Open Access
Nitride Semiconductors
physica status solidi (a)·2024Open Access
Achieving zero efficiency droop in highly efficient N-polar AlGaN tunnel junction-based 254 nm DUV LED
Optics & Laser Technology·2024· 8 cited
Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs
physica status solidi (a)·2024· 1 cited
Estimation of Junction Temperature in Single 228 nm‐Band AlGaN Far‐Ultraviolet‐C Light‐Emitting Diode on c‐Sapphire Having 1.8 mW Power and 0.32% External Quantum Efficiency
physica status solidi (a)·2024· 25 citedOpen Access
Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm
physica status solidi (b)·2024
Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs
physica status solidi (a)·2023· 18 cited
Far-infrared Gallium Nitride-based Quantum Cascade Laser
BENTHAM SCIENCE PUBLISHERS eBooks·2023
Progress in 230nm-band AlGaN far-UVC LEDs and demonstration of 100mW class LED panels
2023
Phonon-assisting injection three quantum-levels terahertz quantum cascade lasers for high-temperature operation
2023
page 1 of 23Next →

Frequent Co-authors

Noritoshi Maeda(14), Yoshinobu Aoyagi(12), Masafumi Jo(12), Norihiko Kamata(9), M. Ajmal Khan(8), Norimichi Noguchi(6), Yoichi Yamada(6), Sachie Fujikawa(5), Akira Hirata(5), Atsuhiro Kinoshita(5), Joosun Yun(4), Masahiro Asada(4), Takayoshi Takano(3), Kenji Tsubaki(3), Yukio Kashima(3), Tohru Yatabe(3), Yasushi Enomóto(3), Yoichi Kawakami(2), Jun Norimatsu(2), K. Aoki(2)