Yoshinobu Aoyagi

Physics and Astronomy · Physical Sciences

49h-index8.2kcitations487works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(128), GaN-based semiconductor devices and materials(106), Semiconductor materials and devices(87), Quantum and electron transport phenomena(64), Thin-Film Transistor Technologies(41)

Publications487 total

Formation of two-dimensional multichannel vertical optical waveguides in a nitrogen-vacancy center diamond using a femtosecond Bessel beam laser for local quantum sensing
Applied Physics Letters·2025Open Access
Medical Application of Deep UV Light and Inactivation of Virus
The Japan Society of Applied Physics·2021
- Laser Induced Ohmic Contact Formation(LOC) - Laser-induced High Performance Local Ohmic Electrode Formation for Vertical GaN Devices
The Japan Society of Applied Physics·2019
Formation of conductive AlN buffer layer using spontaneous via-holes and realization of vertical AlGaN Schottky diode on a Si substrate
Journal of Applied Physics·2019· 5 cited
- Laser Induced Ohmic Contact Formation(LOC) - Laser Induced Formation of Local Ohmic Contact on p-GaN
The Japan Society of Applied Physics·2018
Laser-induced local activation of Mg-doped GaN with a high lateral resolution for high power vertical devices
AIP Advances·2018· 9 citedOpen Access
Laser Induced Activation of Mg doped GaN and the Local Control of the Activation
The Japan Society of Applied Physics·2017
Formation of conductive AlN buffer layer toward vertical high power AlGaN FET on Si substrate
The Japan Society of Applied Physics·2016
Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells
Electronics and Communications in Japan·2016· 2 cited
Realization of conductive AlN epitaxial layer on Si substrate using spontaneously formed nano-size via-holes for vertical AlGaN high power FET
2016· 2 cited
Development of Micro-Plasma Excited Deep Ultra Violet (DUV) Light Emitting Device and Medical Application of DUV Light
The Review of Laser Engineering·2015Open Access
Extended Summaries
IEEJ Transactions on Fundamentals and Materials·2014Open Access
Development of High Power, Large Area, Deep Ultraviolet Light Emitting Device using Dynamic Micro-plasma Excitation of AlGaN Multi-quantum Wells (MIPE)
IEEJ Transactions on Fundamentals and Materials·2014
Quantum Structures of Advanced Materials
Springer series in materials science·2013
Optical Properties of Advanced Materials
Springer series in materials science·2013· 9 cited
Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
AIP Advances·2012· 15 citedOpen Access
High-Sensitivity Ozone Sensing Using 280 nm Deep Ultraviolet Light-Emitting Diode for Detection of Natural Hazard Ozone
Journal of Environmental Protection·2012· 49 citedOpen Access
High hole carrier concentration realized by alternative co-doping technique in metal organic chemical vapor deposition
Applied Physics Letters·2011· 42 citedOpen Access
Inactivation of Bacterial Viruses in Water Using Deep Ultraviolet Semiconductor Light-Emitting Diode
Journal of Environmental Engineering·2011· 84 cited
AlGaN Channel HEMT with Extremely High Breakdown Voltage
MRS Proceedings·2011· 4 cited
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Frequent Co-authors

Hideki Hirayama(11), Kazuhito Tsukagoshi(10), Satoru Tanaka(8), Misaichi Takeuchi(8), Susumu Namba(8), Shuji Komuro(6), Xinwei Zhao(6), Atsuhiro Kinoshita(5), Atsutoshi Doi(5), Takuo Sugano(5), Takeo Minari(4), Tetsuhiko Miyadera(4), Akira Hirata(4), Takitaro Morikawa(4), Hideo Isshiki(4), Sohachi Iwai(3), P. Ramvall(3), Yasushi Enomóto(3), Yasushi Nanishi(3), Shintaro Nomura(3)